pssi5012 Power Semiconductors, Inc., pssi5012 Datasheet

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pssi5012

Manufacturer Part Number
pssi5012
Description
Igbt Module
Manufacturer
Power Semiconductors, Inc.
Datasheet
PSIG 50/12
IGBTs
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
C25
C80
CES
GES
CM
SC
d(on)
r
d(off)
f
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
thJC
thJH
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 50 A; V
= 1 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 0 V; V
= 25 V; V
= ±15 V; R
CE
GE
CES
CES
= 600 V; I
= 15/0 V; R
PSI 50/12*
;
; V
GE
GE
GE
GE
GE
= 15 V; T
= ± 20 V
G
= V
V
= ±15 V; R
= 0 V; f = 1 MHz
GE
= 47 Ω; T
C
CE
= 30 A
G
= 0 V; T
VJ
= 47 Ω
T
= 125°C
VJ
VJ
= 125°C
= 25°C
G
VJ
T
= 47 Ω; T
= 125°C
VJ
VJ
(T
©
= 25°C
= 125°C
VJ
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
= 25°C, unless otherwise specified)
PSSI 50/12*
PSIG 50/12
PSI
PSIS 50/12*
PSSI 50/12*
VJ
= 125°C
min.
4.5
Characteristic Values
50/12*
Maximum Ratings
1.65
100
500
typ.
3.1
3.5
4.6
3.4
1.2
70
70
1200
± 20
V
208
CES
49
33
50
10
*NTC optional
PSIS 50/12*
max.
180
3.7
6.5
1.1 mA
4.2 mA
0.6 K/W
K/W
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
C25
Features
Applications
Advantages
NTC
CES
NTC
CE(sat)typ.
T 16
LN 9
L 9
E 2
K 1 0
X 1 6
L 9
F 1
L 9
X 15
X 16
X 16
X 15
S18
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
ECO-PAC
A1
= 49 A
= 1200 V
= 3.1 V
IK 10
RS 18
G H 1 0
AC 1
RS 18
IK 10
O P 9
V X 1 8
AC 1
JK 10
PSIS
PSIG
PSI
PSSI
X 1 3
X 1 5
TM
N T C
2

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pssi5012 Summary of contents

Page 1

IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet PSI 50/12* PSIG 50/12 IGBTs Symbol Conditions 25°C to 150°C CES VJ V GES 25°C C25 80°C C80 C ...

Page 2

Reverse diodes (FRED) Symbol Conditions 25°C F25 80°C F80 C Symbol Conditions 25° 125° ...

Page 3

Fig. 1 Typ. output characteristics 20V ...

Page 4

V = 600 ± Ω 125° d(on Fig. 7 Typ. turn on energy ...

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