pssi2512 Power Semiconductors, Inc., pssi2512 Datasheet

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pssi2512

Manufacturer Part Number
pssi2512
Description
Igbt Module
Manufacturer
Power Semiconductors, Inc.
Datasheet
PSIG 25/12
IGBTs
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
R
R
C25
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
ies
thJC
thJH
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
= 25 A; V
= 0.6 mA; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 0 V; V
= 25 V; V
= ±15 V; R
CE
GE
= 600 V; I
CES
CES
= 15/0 V; R
PSI 25/12*
;
; V
GE
GE
GE
GE
GE
= 15 V; T
= ± 20 V
G
V
= ±15 V; R
= 0 V; f = 1 MHz
GE
= 82 Ω; T
= V
C
= 17.5 A
G
= 0 V; T
VJ
CE
= 82 Ω
= 125°C
T
VJ
VJ
= 125°C
= 25°C
G
VJ
T
= 82 Ω; T
= 125°C
VJ
VJ
(T
©
= 25°C
= 125°C
VJ
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
= 25°C, unless otherwise specified)
PSIG 25/12
PSI
PSIS 25/12*
PSSI 25/12*
PSSI 25/12*
VJ
= 125°C
min.
Characteristic Values
4.5
25/12*
Maximum Ratings
1.92
typ. max.
100
500
2.6
2.9
2.7
2.1
75
70
1200
± 20
V
1
130
CES
30
21
35
10
*NTC optional
PSIS 25/12*
0.96 K/W
100
3.3
6.5
0.9 mA
3.7 mA
K/W
mJ
mJ
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
I
V
V
C25
Features
Applications
Advantages
N TC
LN 9
N TC
CES
T 16
CE(sat)typ.
E 2
L 9
K 1 0
X 1 6
L 9
F 1
L 9
X 16
X 15
X 16
X 15
S18
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
ECO-PAC
A1
= 30 A
= 1200 V
= 2.6 V
G 1 0
RS 18
IK 10
A C 1
P 9
X 1 8
IK 10
R S 18
A C 1
JK 10
PSIS
PSI
PSIG
PSSI
X 1 3
X 1 5
TM
N T C
2

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pssi2512 Summary of contents

Page 1

IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet PSI 25/12* PSIG 25/12 IGBTs Symbol Conditions 25°C to 150°C CES VJ V GES 25°C C25 80°C C80 C ...

Page 2

Reverse diodes (FRED) Symbol Conditions 25°C F25 80°C F80 C Symbol Conditions 17 25° 125° ...

Page 3

V = 17V 15V I T 13V Fig. 1 Typ. output characteristics 20V ...

Page 4

E d(on Fig. 7 Typ. turn on energy and switching Fig. 9 Typ. turn ...

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