stm8601 SamHop Microelectronics Corp., stm8601 Datasheet - Page 3

• Manufacturer Part Number: stm8601
• Description: Dual Enhancement Mode Field Effect Transistor N And P Channel
• Manufacturer: SamHop Microelectronics Corp.

STM8601
P-Channel ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
ON CHARACTERISTICS
R
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS
Q
Q
Q
I
I
V
g
t
t r
t
t f
I
Notes
V
DSS
GSS
D(ON)
D(OFF)
S
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
FS
DS(ON)
ISS
OSS
RSS
GS(th)
g
gs
gd
SD
DSS
Drain-Source Breakdown Voltage
Parameter
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage
J
=25 ° C,L=0.5mH,V
_
DD
b
=20V,V
c
_
c
GS
=10V.(See Figure13)
_
Conditions
V
V
V
V
V
V
V
V
V
I
V
R
V
V
V
V
V
f=1.0MHz
D
GS
DS
GS
GS
GS
DS
DS
DS
DD
GS
DS
DS
GS
GS
GEN
DS
=-1A
=0V , I
=-48V , V
=-10V , I
=-4.5V , I
=V
=-5V , I
=-30V,V
=-30V
=-10V
=-30V,I
=-30V,I
=-30V,I
=-30V
=0V,I
= ±20V , V
=3.3 ohm
GS
3
S
, I
D
=-2A
( T
=-250uA
D
D
D
D
D
GS
=-3.3A
=-3.3A,V
=-3.3A,
D
=-3.3A,V
=-250uA
GS
D
A
=-3.3A
=-2.8A
=0V
DS
=25 ° C unless otherwise noted )
=0V
=0V
GS
GS
=-10V
=-4.5V
-1.0
Min
-60
www.samhop.com.tw
-0.81
12.4
-1.8
10.5
Typ
110
730
1.5
3.3
6.7
85
68
43
14
65
23
7
±100
Max
-1.2
-3.0
105
150
-1
-2
Nov,06,2008
Ver 1.0
m ohm
m ohm
Units
uA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
V
S
A
V