STT432S SamHop Microelectronics Corp., STT432S Datasheet

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STT432S

Manufacturer Part Number
STT432S
Description
N-channel Logic Level Enhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet
Details are subject to change without notice.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS ( T
Symbol
V
V
I
I
E
P
THERMAL CHARACTERISTICS
R
T
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
AS
D
a
PRODUCT SUMMARY
T
JA
V
STG
40V
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Single Pulse Avalanche Energy
Thermal Resistance, Junction-to-Ambient
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
11A
I
D
SO - 223
R
-Pulsed
G
11.5 @ VGS=10V
STT SERIES
15 @ VGS=4.5V
DS(ON)
T
b
S
(m
a
) Max
A
=25 ° C unless otherwise noted )
a
d
T
T
T
T
C
C
C
C
=25 ° C
=70 ° C
=25 ° C
=70 ° C
FEATURES
a
Super high dense cell design for low R
Rugged and reliable.
Surface Mount Package.
1
Green
Product
G
D
-55 to 150
STT432S
S
Limit
±20
110
1.9
8.8
40
11
44
42
3
www.samhop.com.tw
DS(ON)
.
Aug,04,2009
Units
°C/W
mJ
°C
W
W
Ver 1.0
V
V
A
A
A

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STT432S Summary of contents

Page 1

... Max Rugged and reliable. Surface Mount Package. S =25 ° C unless otherwise noted ) A =25 ° =70 ° =25 ° =70 ° STT432S Green Product . DS(ON Limit 40 ±20 11 8.8 44 110 3 1.9 -55 to 150 42 Aug,04,2009 www.samhop.com.tw Ver 1.0 Units V ...

Page 2

... STT432S ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance ISS Output Capacitance C OSS Reverse Transfer Capacitance ...

Page 3

... STT432S 100 V =10V =4. 1.0 0 Drain-to-Source Voltage(V) DS Figure 1. Output Characteristics Drain Current(A) D Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 - Tj, Junction Temperature( ° Figure 5. Gate Threshold Variation with Temperature ...

Page 4

... STT432S Gate-to-Source Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 1800 1500 Ciss 1200 900 600 Coss 300 Crss Drain-to-Source Voltage(V) DS Figure 9. Capacitance 300 100 10 VDS=20V,ID=1A VGS=10V Rg, Gate Resistance( Figure 11. switching characteristics ...

Page 5

... STT432S 20V 0 Inductive Te t Circuit Unclamped F igure 13a. 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 Figure 14. Normalized Thermal Transient Impedance Curve 15V D R IVE 0.01 0.1 Square Wave Pulse Duration(sec Unclamped Inductive W ave F igure 13b ...

Page 6

... STT432S 0.25 DETAIL "A" SYMBOL DIMENSIONS MILLIMETER MIN 0.02 A2 1.50 b 0.66 b1 0.60 b2 2. 0.23 c1 0.23 D 6.30 E 6. 0.81 0 ° DETAIL "A" 0. GAUGE PLANE SEATING PLANE C COMMON MOM. MIN. 1.80 0.10 1.60 1.70 0.84 0.76 0.71 0.79 3.00 3.10 3.05 2.95 0.06 0.30 0.35 0.28 0.33 6.50 6.70 7.00 7.30 3.50 3.70 2.30 BSC 4 ...

Page 7

... STT432S SOT-223 Carrier Tape P0 A0 unit PACKAGE 7.42 6.83 0.1 0.1 SOT-223 Reel UNIT: REEL SIZE M 330 0.5 SOT-223 Tape and Reel Data 12.0 1.88 1.50 1.60 1.75 + 0.3 0.1 + 0.25 + 0.1 0 13.0 97.0 13.0 2.2 10.6 + 0.5 + 1.5 1 5.50 4.00 8.0 2.00 0.5 0.1 0.1 0. 2.0 0.5 www.samhop.com.tw Ver 1.0 T 0.292 0.02 V Aug,04,2009 ...

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