tle4998s Infineon Technologies Corporation, tle4998s Datasheet - Page 26

• Manufacturer Part Number: tle4998s
• Description: Tle4998s/p-programming Guide
• Manufacturer: Infineon Technologies Corporation

3. Send a write command (EEPROM data write: CMD=0x09, ADR=0x18)
4. Send the 9th data word from the array to the EEPROM
5. Send a write command (EEPROM data write: CMD=0x09, ADR=0x19)
6. Send the 10th data word from the array to the EEPROM
7. Send a write command (EEPROM data write: CMD=0x09, ADR=0x1A)
8. Send the 11th data word from the array to the EEPROM
Detail four: How to calculate the bits to be cleared from EEP_OLD to EEP_NEW:
1. For each data word i in the arrays calculate:
2. EEP_PROG[i] = INVERT ((EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_OLD[i])
Detail five: How to calculate the bits to be set from EEP_OLD to EEP_NEW:
1. For each data word i in the arrays calculate:
2. EEP_PROG[i] = (EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_NEW[i]
Detail six: How to determine the EEPROM margin voltages
The threshold voltage of EEPROM cells is dependent on the programming voltage and
programming pulse length. The margin command can be used to check the threshold
voltages of the programmed cells: A voltage V
command (CMD No. OxF, see timing diagram in
threshold voltage smaller than the applied V
registers, for those with a higher threshold voltage, a '1' will be written. By sweeping the
applied V
The threshold voltages of cells programmed to ‘1’ can be found in this way.
In order to check the threshold voltages of EEPROM cells programmed to ‘0’, it is
necessary to activate the “Margin zero on” bit in the test register
smallest possible V
threshold voltages below 0V.
Note: This routine can be merged with other (exemplary shown) routines. In that case
Application Note
Example of a calculated erase mask:
EEP_OLD:
EEP_NEW:
EEP_PROG: 1111111011111111
Example of a calculated program mask:
EEP_OLD:
EEP_NEW:
EEP_PROG: 0000100000000000
only one initial frame (the very first interface access) is required after power-on.
o,margin
, the effective threshold voltages of each EEPROM cell can be identified.
0101010101010101
0101110001010101
0101010101010101
0101110001010101
o,margin
is 0V, and it is therefore not possible to determine the
24
o,margin
o,margin
TLE4998S/P-Programming Guide
Figure
, a '0' will be stored to the EEPROM
Interface Access Details - Part III
is applied after the margin mode
13). For EEPROM cells with a
(Figure
V 1.1, 2008-08
16). The