zxms6006sg Diodes, Inc., zxms6006sg Datasheet - Page 4

• Manufacturer Part Number: zxms6006sg
• Description: 60v N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
• Manufacturer: Diodes, Inc.

Recommended Operating Conditions
Thermal Characteristics
Input voltage range
Ambient temperature range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
The ZXMS6006SG is optimized for use with µC operating from 3.3V and 5V supplies.
ZXMS6006SG
Document number: DS35141 Rev. 1 - 2
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
100m
10m
120
100
80
60
40
20
10
100µ
0
1
Transient Thermal Impedance
Single Pulse
Limited
by R
T
D=0.5
D=0.2
15X15X1.6 mm
Single 1oz FR4
amb
15X15X1.6 mm
Single 1oz FR4
DC
=25°C
DS(on)
1m
Characteristic
V
T
Safe Operating Area
amb
DS
=25°C
1s
Drain-Source Voltage (V)
10m 100m
1
100ms
Pulse Width (s)
Limited by Over-Current Protection
10ms
Limit of s/c protection
1
D=0.1
10
D=0.05
10
Single Pulse
100
1ms
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1k
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Symbol
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
V
V
V
1
100µ
T
V
IN
IH
A
IL
P
0
Pulse Power Dissipation
1m
25
15X15X1.6 mm
Single 1oz FR4
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
50
Min
-40
0
3
0
0
Diodes Incorporated
75
A Product Line of
1
15X15X1.6 mm
Single 1oz FR4
50X50X1.6 mm
Single 2oz FR4
100
Single Pulse
T
amb
10
Max
125
5.5
5.5
0.7
=25°C
16
ZXMS6006SG
125
100
© Diodes Incorporated
150
1k
December 2010
Unit
°C
V
V
V
V