zxms6006sg Diodes, Inc., zxms6006sg Datasheet - Page 5

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zxms6006sg

Manufacturer Part Number
zxms6006sg
Description
60v N-channel Self Protected Enhancement Mode Intellifet ? Mosfet
Manufacturer
Diodes, Inc.
Datasheet

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Part Number
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Part Number:
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Part Number:
zxms6006sgTA
Quantity:
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Electrical Characteristics
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
Input Threshold Voltage
Input Current
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
Continuous Drain Current (Note 4)
Continuous Drain Current (Note 5)
Current Limit (Note 7)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
Thermal Hysteresis (Note 8)
Notes:
ZXMS6006SG
Document number: DS35141 Rev. 1 - 2
IntelliFET
7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
operating range, so this part is not designed to withstand over-temperature for extended periods..
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
V
R
V
I
D(LIM)
t
t
DS(AZ)
I
DS(on)
d(on)
d(off)
T
DSS
IN(th)
I
I
IN
t
f
f
-
D
JT
r
f
f
Min
150
0.7
2.0
2.2
2.6
2.8
www.diodes.com
60
4
6
-
-
-
-
-
-
-
-
-
-
-
-
5 of 9
Typ
120
175
8.6
65
60
85
75
13
18
34
15
10
1
8
-
-
-
-
-
-
-
Max
300
100
400
125
100
1.5
70
1
2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Diodes Incorporated
µA
μA
μA
°C
°C
μs
V
V
A
A
A Product Line of
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D
DS
DS
DS
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DD
= 10mA
= +3V
= +5V
= +5V
= +3V, I
= +5V, I
= 3V; T
= 5V; T
= 3V; T
= 5V; T
= +3V
= +5V
= 12V, V
= 36V, V
= V
= 12V, I
ZXMS6006SG
GS
Test Condition
, I
A
A
A
A
D
D
D
D
= 25°C
= 25°C
= 25°C
= 25°C
IN
IN
= 1A
= 1A
= 1mA
= 1A, V
= 0V
= 0V
-
-
© Diodes Incorporated
December 2010
GS
= 5V

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