bd6761fs ROHM Co. Ltd., bd6761fs Datasheet

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bd6761fs

Manufacturer Part Number
bd6761fs
Description
Motor Driver Ic Series For Printers Three-phase Brushless Motor Pre-driver For Paper Feed Us
Manufacturer
ROHM Co. Ltd.
Datasheet
Motor Driver IC Series for Printers
Three-phase Brushless
Motor pre-driver for Paper Feed Use
BA6680FS, BD6761FS, BD6762FV
●Description
●Features
●Applications
●Absolute maximum ratings (Ta=25℃)
●Product lineup
This product is a motor predriver for high-side/low-side N-channel MOS-FET with a built-in boost (step-up) driver. BA6680FS and
BD6761FS are controlled by the external servo signal. The BD6762FV incorporates a servo circuit (Speed discriminator + PLL servo).
Main paper feed motor for laser printer and PPC
10) Built-in motor lock protection circuit (BD6762FV)
12) Built-in servo circuit (Speed discriminator + PLL) (BD6762FV)
13) Built-in frequency multiplication circuit (BD6762FV)
14) 120°, direct PWM drive (BA6680FS)
15) 180°, direct PWM drive (BD6761FS)
16) 120°, slope switchable direct PWM drive (BD6762FV)
Applied voltage
Applied voltage
Pin input voltage
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
11) Built-in start-stop circuit (BD6762FV)
Power supply voltage (VCC)
Drive type
Servo
1) Predriver for high-side/low-side N-channel MOS-FET
2) Built-in boost (step-up) circuit
3) Built-in FG and hysteresis amplifiers
4) Built-in current limit circuit
5) Built-in thermal shutdown circuit
6) Built-in forward/reverse rotation switching circuit (BD6761FS, FD6762FV)
7) Built-in short brake circuit (BD6761FS, BD6762FV)
8) Built-in low voltage protection circuit (BD6761FS, BD6762FV)
9) Built-in speed lock detection circuit (BD6762FV)
1
2
Reduced by 7.6 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm × 70 mm × 1.6 mm).
Reduced by 8.8 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm × 70 mm × 1.6 mm).
Parameter
TECHNICAL NOTE
Symbol
T OPR
T STG
Tjmax
VCC
VG
Vin
Pd
BA6680FS
16~28
120°
No
BA6680FS
-40~+150
-25~+75
950
VREG
150
36
36
(
1)
BD6761FS
16~28
180°
No
BD6761FS
-40~+150
-35~+75
950
VREG
Limit
150
36
36
(
1)
120° / 120° slope
BD6762FV
16~28
BD6762FV
-40~+150
-25~+75
Yes
1100
VREG
150
36
36
(
2)
Unit
mW
Unit
V
V
V
V
Ver.B Oct.2005

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bd6761fs Summary of contents

Page 1

... BA6680FS, BD6761FS, BD6762FV ●Description This product is a motor predriver for high-side/low-side N-channel MOS-FET with a built-in boost (step-up) driver. BA6680FS and BD6761FS are controlled by the external servo signal. The BD6762FV incorporates a servo circuit (Speed discriminator + PLL servo). ●Features 1) Predriver for high-side/low-side N-channel MOS-FET ...

Page 2

Characteristics BA6680FS (Unless otherwise specified, Ta=25°C, VCC=25.5V) Parameter Overall Circuit current VREG voltage Hall amp Input bias current In-phase input voltage range Minimum input level Hysteresis level PWM High output voltage Low output voltage Oscillating frequency (reference values) Pref. ...

Page 3

... BD6761FS (Unless otherwise specified, Ta=25°C, VCC=24.0V) Parameter Symbol Overall Circuit current ICC VREG voltage VREG Hall amp Input bias current IHA In-phase input voltage range VHAR Input level VINH PWM High CFE voltage VHPCFE Low CFE voltage VLPCFE CFE oscillating frequency ...

Page 4

BD6762FV (Unless otherwise specified, Ta=25°C, VCC=24V) Parameter Overall Circuit current 1 Circuit current 2 VREG voltage Low voltage protection level Low voltage protection hysteresis level Hall amp Input bias current In-phase input voltage range Input level PWM High CFE voltage ...

Page 5

BD6762FV (Unless otherwise specified, Ta=25°C, VCC=24 V) Parameter Start/Stop High-level ST/SP input voltage Low-level ST/SP input voltage High-level ST/SP input current Low-level ST/SP input current Forward rotation/Reverse rotation High-level FR input voltage Low-level FR input voltage High-level FR input current ...

Page 6

... Fig.7 Circuit current (BD6762FV) ● Power dissipation reduction 950 500 0 25 Ambient Temperature:Ta[℃] Fig.10 BA6680FS and BD6761FS Power Dissipation Reduction Reduced by 7.6 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm × × 1.6 mm). 7.0 6.5 75℃ 25℃ 6.0 -25℃ ...

Page 7

Application circuit diagram, and Pin function 1)BA6680FS ④ Capacitor for setting VG current capacity See P. 20/24. 0.01μF (0.01μF~0.1μF) ⑨ Capacitor for setting OSC frequency CP1 CP2 See P. 20/24 COSC OSC 100pF OSC (50pF~200pF) FGsout 1500pF FGout ...

Page 8

... Q EDGE VCL2 DETECT TORQUE AMP PH PEAK HOLD VCL1 CURRENT SENSE AMP HU+ 0.01μF HU- SLEW RATE HV+ DETECT 0.01μF HV- HW+ 0.01μF HW- 16pin Fig.13 BD6761FS Block Diagram Function No 8/24 ④ Capacitor for setting VG current capacity See P. 20/24. 32pin CP2 ⑭ ...

Page 9

RF voltage smoothing low pass filter See P. 20/24. ⑧ 0.1Ω RNF Resistor for setting the current limit See P. 20/24. 0.1μF MOS FET VCO ③ Capacitor for the protection between the output FET drain and source 0.1μF ...

Page 10

... H M Condition <Input conditions> <Output criteria> Hall input voltage High-side FET gate voltage H : 1.3V L≦1 V, VG-1V≦ 1.2V Low-side FET gate voltage L : 1.1V L≦ V≦H 2)BD6761FS Forward rotation (F/R=Low) Input conditions 15 17 Pin No. HU+ HV+ Condition Condition Condition 3 ...

Page 11

ACC, DEC Input conditions 21 22 Pin No. DEC ACC Condition Condition Condition Condition <Input conditions> ACC, DEC input conditions H:2.2V L:0.8V <Output criteria> ○CPOUT RCP=13.5kΩ, CPOUT=3V High: ...

Page 12

Forward rotation (F/R=Low), 120° (120/SL=High) Input conditions Pin No. HU+ HV+ HW+ Condition Condition Condition Condition Condition ...

Page 13

... HW- HW+ SINU SINV Switching by PWM SINW Forward rotation UHG ULG VHG VLG WHG WLG Reverse rotation UHG ULG VHG VLG WHG WLG SINU, SINV, and SINW are the internal IC signals synthesized by the Hall amplifier. 13/24 Triangular waveform amplitude Fig.16 BD6761FS I/O Timing Chart ...

Page 14

... DEC pins VREG (pin14) 30kΩ 1kΩ 1kΩ 10kΩ DEC (pin25) ACC (pin26) ○FG amplifier input VREG 1kΩ 1kΩ FGin+ (pin21) 2)BD6761FS ○High-side gate VG VG UHG (pin3) VHG (pin5) WHG (pin7) 100kΩ ○Booster VREG 8.5V VCC CP1 CP2 30Ω ...

Page 15

RFE pins VREG 33kΩ VCC 26kΩ 30Ω RCP (pin23) ○Peak hold VCC 200Ω 200Ω CL (pin9) PH (pin10) ○FG amplifier input VREG V VCC VCC 25kΩ 200Ω 200Ω FGIN+ (pin26) 25kΩ 3)BD6762FV ○RF pin VCC RF (pin2) 1kΩ ○CFE ...

Page 16

VCC 50kΩ 5kΩ CLKIN (pin29) ○ FGSOUT pin VREG FGSOUT (pin28) 20kΩ ○ INTIN pin VREG VCC 1kΩ INTIN (pin33) ○ LP pin VREG 5kΩ 5kΩ 5kΩ 5kΩ 5kΩ ○ VG, CP2, CP1 pins VCC 8.5V 30Ω CP1 ...

Page 17

... BA6680FS generates the triangular waveform by connecting a capacitor (COSC = 100pF: Frequency = 95 kHz) between the OSC and GND pins. BD6761FS (Frequency = 62.5 kHz) and BD6762FV (Frequency = 125 kHz) generate the triangular waveform by the internal free-run oscillator and the rectangular waveform at CP1. When a capacitor is connected between CP1 and CP2, and VG and GND, the step-up voltage is generated at VG pin ...

Page 18

... Short brake (BD6761FS and BD6762FV) BD6761FS operates the short brake action with the ACC and DEC pins set to low, while BD6762FV does so with the SB pin set to OPEN or high. At the time of short brake, the high-side gate is turned off and the low-side is turned on. At the time of short brake operating, the current flows to the output FET, which is set by the motor's counter electromotive voltage and coil impedance ...

Page 19

Servo circuit (BD6762FV) ・ Frequency multiplication circuit (Dividing period) (BD6762FV with a built-in the frequency multiplication circuit. Servo circuit is composed of the feedback loop as shown in the diagram and flows in/out the current (22μA: Typ.) ...

Page 20

... Amplitude level increases when the resistance value is chosen smaller by considering the noise affect. Pay attention to the hall input voltage range. BA6680FS (1.0V to 4.9V), BD6761FS (1.5V to 4.1V) and BD6762FV (0V to 3V) ⑦VREG VREG which is the internal voltage output pin drives the circuits in IC. Connect the capacitor to stabilize it. ⑧ ...

Page 21

... Please perform the sufficient verification using the actual product for the field operation. A value of 0.001μF to 0.1μF is recommended. A value of 0.001μF is appropriate for BA6680FS. A value of 0.1μF is appropriate for BD6761FS. A value of value 1μF to 10μF is recommended. A value of 10μF is appropriate. ...

Page 22

... IC off to prevent thermal runaway not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the environment where the operation of this circuit is assumed. BA6680FS BD6761FS BD6762FV 10. PWM drive Voltage between the output FET drain and source may exceed the absolute maximum ratings due to the fluctuation of VCC at the time of PWM driving ...

Page 23

Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N ...

Page 24

ROHM model name Part number SSOP-A32 <Dimension> 13.6 ± 0 0.15 ± 0.1 0.1 0.36 ± 0.1 0.8 SSOP-B40 <Dimension> 13.6 ± 0 ...

Page 25

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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