vn0645 Supertex, Inc., vn0645 Datasheet

no-image

vn0645

Manufacturer Part Number
vn0645
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
Ordering Information
† MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
450V
500V
ISS
DSS
DGS
and fast switching speeds
/
R
(max)
DS(ON)
16
16
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
BV
300 C
BV
(min)
I
20V
0.5A
0.5A
D(ON)
DGS
DSS
7-175
Advanced DMOS Technology
The VN0650 is NOT recommended for new designs. Please
use VN2450 instead.
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
VN0645N2
Note: See Package Outline section for dimensions.
TO-39
Case: DRAIN
Order Number / Package
TO-39
D G S
VN0650N3
TO-92
VN0650ND
Die
TO-92
S G D
VN0645
VN0650
7

Related parts for vn0645

vn0645 Summary of contents

Page 1

... Package Options TO-39 BV DSS Case: DRAIN BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-175 VN0645 VN0650 † TO-92 Die — — VN0650N3 VN0650ND TO-92 7 ...

Page 2

... VN0645 450 2 -4.5 100 10 0.8 0.5 1 0.75 100 120 130 1.8 300 90% GENERATOR t (OFF d(OFF) F 10% 90% 7-176 VN0645/VN0650 C/W C/W 21 125 0.4A 125 170 0.2A Unit Conditions 0V 2mA 2mA mV 2mA GS DS ...

Page 3

... 150 0.8 1.0 1.0 0.8 0.6 0.4 0.2 0 100 1000 0.001 7-177 VN0645/VN0650 Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature TO-39 TO- 100 125 Thermal Response Characteristics TO- ...

Page 4

... V (volts 100 150 0 1.4 1.2 1.0 0 ISS 7-178 VN0645/VN0650 On-Resistance vs. Drain Current V = 10V 0.3 0.6 0.9 1.2 I (amperes and R Variation with Temperature (th 10V, 400mA 2mA (th 100 Gate Drive Dynamic Characteristics ...

Related keywords