ncv8406 ON Semiconductor, ncv8406 Datasheet

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ncv8406

Manufacturer Part Number
ncv8406
Description
Ncv8406 Self-protected Low Side Driver With Temperature And Current Limit
Manufacturer
ON Semiconductor
Datasheet

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NCV8406
Self-Protected Low Side
Driver with Temperature
and Current Limit
65 V, 7.0 A, Single N−Channel
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2010
November, 2010 − Rev. 1
NCV8406 is a three terminal protected Low-Side Smart Discrete
and Change Control
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
RoHS Compliant
AEC-Q101 Qualified
These Devices are Faster than the Rest of the NCV Devices
NCV Prefix for Automotive and Other Applications Requiring Site
These are Pb−Free Devices
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
1
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Gate
Input
(Clamped)
V
65 V
CASE 318E
1 2
CASE 369C
(Note: Microdot may be in either location)
DSS
1
SOT−223
STYLE 3
ESD Protection
DPAK
2
A
Y
W, WW = Work Week
G or G
ORDERING INFORMATION
3
3
Temperature
http://onsemi.com
4
Limit
4
= Assembly Location
= Year
= Pb−Free Package
R
Overvoltage
Protection
DS(on)
210 mW
Publication Order Number:
TYP
Current
1
GATE
Limit
4
MARKING
DIAGRAM
DRAIN
2
DRAIN
YWW
V8406G
8406G
AYW
G
Drain
(Limited)
Current
Sense
NCV8406/D
I
Source
3
D
7.0 A
SOURCE
TYP

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ncv8406 Summary of contents

Page 1

... Driver with Temperature and Current Limit 65 V, 7.0 A, Single N−Channel NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage Drain Current Total Power Dissipation − SOT−223 Version @ T = 25°C (Note 25°C (Note 2) A Total Power ...

Page 3

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage ( mA Zero Gate Voltage Drain Current ( Gate Input Current (V = ...

Page 4

TYPICAL PERFORMANCE CURVES (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance 10 1 0.1 1 TIME IN CLAMP (ms) Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp ...

Page 5

V (V) GS Figure 8. R vs. Gate−Source Voltage DS(on) 2 2.0 1.5 1.0 0.5 ...

Page 6

T (°C) Figure 14. Normalized Threshold Voltage vs. Temperature 1600 1400 ...

Page 7

PCB Cu thickness, 1 PCB Cu thickness, 2 100 200 300 400 COPPER HEAT SPREADER AREA (mm Figure 19. R vs. Copper Area − SOT−223 qJA 1000 100 50% Duty ...

Page 8

TEST CIRCUITS AND WAVEFORMS VIN RG Figure 23. Resistive Load Switching Test Circuit VIN td(ON) tr IDS Figure 24. Resistive Load Switching Waveforms http://onsemi.com VDD − DUT G S IDS td(OFF 90% 10% 90% 10% ...

Page 9

TEST CIRCUITS AND WAVEFORMS VIN RG tp Figure 25. Inductive Load Switching Test Circuit VIN VDS V DS(on) IDS Figure 26. Inductive Load Switching Waveforms http://onsemi.com L VDS D + VDD DUT − IDS ...

Page 10

... ORDERING INFORMATION Device NCV8406STT3G NCV8406DTRKG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SOT−223 (Pb−Free) DPAK (Pb−Free) http://onsemi.com 10 † Shipping 4000 / Tape & Reel ...

Page 11

... A 0.08 (0003) A1 2.0 0.079 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 12

... BSC L3 0.035 0.050 0.89 1.27 L4 −−− 0.040 −−− 1.01 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8406/D ...

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