ncv8406 ON Semiconductor, ncv8406 Datasheet - Page 3

• Manufacturer Part Number: ncv8406
• Description: Ncv8406 Self-protected Low Side Driver With Temperature And Current Limit
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Current limit measured at 380 ms after gate pulse.
6. Not subject to production test.
SELF PROTECTION CHARACTERISTICS (Note 4)
ESD ELECTRICAL CHARACTERISTICS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
Drain−to−Source Clamped Breakdown Voltage
(V
Zero Gate Voltage Drain Current
(V
Gate Input Current
(V
Gate Threshold Voltage
(V
Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 3)
(V
Static Drain−to−Source On−Resistance (Note 3)
(V
(V
Source−Drain Forward On Voltage
(I
Current Limit
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
Input Current during
Thermal Fault
Electro−Static Discharge Capability
Turn−on Delay Time
Turn−on Rise Time
Turn−off Delay Time
Turn−off Fall Time
Slew Rate ON
Slew Rate OFF
S
GS
DS
GS
DS
GS
GS
GS
= 7.0 A, V
= 52 V, V
= V
= 0 V, I
= 5.0 V, V
= 10 V, I
= 5.0 V, I
= 5.0 V, I
GS
Human Body Model (HBM)
Machine Model (MM)
, I
D
GS
D
D
= 2 mA)
D
D
GS
DS
= 150 mA)
= 2.0 A, T
= 2.0 A, T
= 2.0 A, T
= 0 V)
= 0 V)
= 0 V)
J
J
J
@ 25°C)
@ 25°C)
@ 150°C)
V
V
V
Characteristic
DS
DS
DS
V
V
V
V
V
V
V
V
DS
DS
DD
DD
DD
DD
DD
DD
= 10 V, V
= 0 V, V
= 0 V, V
= 10 V, V
= 10 V, V
= 13.8 V, I
= 13.8 V, I
= 13.8 V, I
= 13.8 V, I
= 13.8 V, I
= 13.8 V, I
R
R
R
R
R
R
L
L
L
GS
L
L
L
GS
GS
= 6.6 W, V
= 6.6 W, V
= 6.6 W, V
V
= 6.6 W, V
= 6.6 W, V
= 6.6 W, V
V
GS
GS
GS
= 5.0 V, T
GS
= 10 V, T
= 5.0 V, T
D
D
D
D
D
D
V
= 5.0 V (Note 6)
V
= 10 V (Note 6)
= 10 V, T
= 2.0 A, 10% V
= 2.0 A, 90% V
= 5.0 V, T
= 2.0 A, 10% I
= 2.0 A, 90% I
GS
= 2.0 A, 70% to 50% V
= 2.0 A, 50% to 70% V
GS
(T
J
= 5.0 V
= 10 V
in
in
in
in
in
in
= 25°C unless otherwise noted)
J
http://onsemi.com
J
= 0 to 10 V,
= 0 to 10 V,
= 0 to 10 V,
= 0 to 10 V,
= 0 to 10 V,
= 0 to 10 V,
J
= T
= T
= 150°C (Notes 5, 6)
J
J
= 25°C (Notes 5)
J
J
= 25°C (Note 5)
> T
> T
D
D
in
in
(fault)
(fault)
3
to 90% I
to 10% I
to 10% I
to 90% I
(Note 6)
(Note 6)
DD
DD
D
D
D
D
dV
dV
DT
DT
V
Symbol
R
R
T
T
V
(BR)DSS
I
td
td
g(fault)
DS
DS
LIM(off)
LIM(off)
I
I
ESD
DS(on)
DS(on)
GS(th)
V
t
I
DSS
GSS
LIM(on)
LIM(on)
t
LIM
rise
fall
(on)
(off)
SD
/dT
/dT
on
off
6000
Min
150
150
500
1.2
5.0
3.5
6.5
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1600
1.66
12.3
Typ
127
486
692
185
210
445
180
180
4.0
0.9
7.0
4.5
8.5
5.9
65
22
30
79
27
10
20
−
−
Max
10.5
100
100
210
240
520
200
200
2.0
1.1
9.5
6.0
70
−
−
−
−
−
−
−
−
−
−
−
−
−mV/°C
V/ms
V/ms
Unit
mW
mW
mA
mA
mA
°C
°C
°C
°C
ns
ns
ns
ns
V
V
V
A
V