ncv8440stt3g ON Semiconductor, ncv8440stt3g Datasheet

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ncv8440stt3g

Manufacturer Part Number
ncv8440stt3g
Description
2.6 A, 52 V, N Channel, Logic Level, Clamped Mosfet W/ Esd Protection
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCV8440STT3G
Manufacturer:
ON
Quantity:
30 000
NCV8440
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Benefits
Features
Applications
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 3
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
and Control Changes
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher R
Internal Series Gate Resistance
These are Pb−Free Devices
Automotive and Industrial Markets:
NCV Prefix for Automotive and Other Applications Requiring Site
DS(on)
1
†For information on tape and reel specifications,
NCV8440STT1G
NCV8440STT3G
(Pin 1)
Gate
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Clamped)
V
52 V
Device
(Note: Microdot may be in either location)
DSS
CASE 318E
SOT−223
ESD Protection
STYLE 3
1 = Gate
2 = Drain
3 = Source
A
Y
W
G
ORDERING INFORMATION
http://onsemi.com
= Assembly Location
= Year
= Work Week
95 mW @ 10 V
= Pb−Free Package
R
Overvoltage
(Pb−Free)
(Pb−Free)
SOT−223
SOT−223
Package
DS(ON)
Protection
Publication Order Number:
TYP
GATE
1
1000/Tape & Reel
4000/Tape & Reel
MARKING
DIAGRAM
4
Drain (Pins 2, 4)
Source (Pin 3)
F9N05 G
DRAIN
Shipping
DRAIN
2
AYW
G
NCV8440/D
I
D
2.6 A
SOURCE
MAX
3

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ncv8440stt3g Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package NCV8440STT1G SOT−223 (Pb−Free) NCV8440STT3G SOT−223 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current Total Power Dissipation @ T = 25°C (Note 1) A Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy (V ...

Page 3

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1.0 mA 25° 1.0 mA −40°C to 125° ...

Page 4

MOSFET ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge ...

Page 5

L, LOAD INDUCTANCE (mH) Figure 1. Single Pulse Maximum Switch−off Current vs. Load Inductance 25° ...

Page 6

1.75 1. 1.25 1. 0.75 0.50 −40 − JUNCTION TEMPERATURE (°C) J Figure 7. Normalized R DS(on) 1000 ...

Page 7

2500 2000 1500 1000 500 (V) GS Figure 13. Resistive Load Switching Time vs. Gate−Source Voltage 10,000 t 1000 t 100 1 100 ...

Page 8

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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