NCV8440 ON Semiconductor, NCV8440 Datasheet
NCV8440
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NCV8440 Summary of contents
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... SOT−223 1000/Tape & Reel (Pb−Free) NCV8440STT3G SOT−223 4000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NCV8440/D MAX 3 SOURCE † ...
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MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Drain Current Total Power Dissipation @ T = 25°C (Note 1) A Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy (V ...
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MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1.0 mA 25° 1.0 mA −40°C to 125°C) (Note 4) ...
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MOSFET ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge ...
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L, LOAD INDUCTANCE (mH) Figure 1. Single Pulse Maximum Switch−off Current vs. Load Inductance 25° ...
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1.75 1. 1.25 1. 0.75 0.50 −40 − JUNCTION TEMPERATURE (°C) J Figure 7. Normalized R DS(on) 1000 ...
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2500 2000 1500 1000 500 (V) GS Figure 13. Resistive Load Switching Time vs. Gate−Source Voltage 10,000 ...
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... E 0° − 10° 0° − 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8440/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...