NCV8440 ON Semiconductor, NCV8440 Datasheet - Page 4

• Manufacturer Part Number: NCV8440
• Description: Protected Power MOSFET
• Manufacturer: ON Semiconductor

MOSFET ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
SOURCE−DRAIN DIODE CHARACTERISTICS
ESD CHARACTERISTICS (Note 4)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Electro−Static Discharge Capability
Characteristic
I
S
I
S
= 2.6 A, V
Human Body Model (HBM)
dI
V
V
V
V
= 2.6 A, V
V
I
D
I
GS
GS
GS
GS
s
I
I
GS
Machine Model (MM)
D
D
S
/dt = 100 A/ms (Note 3)
I
I
= 2.6 A, R
D
D
= 2.6 A, R
= 1.0 A, R
= 1.5 A, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 10 V, V
(T
= 2.6 A (Note 3)
= 1.5 A (Note 3)
J
GS
= 25°C unless otherwise noted)
http://onsemi.com
GS
= 0 V, T
= 0 V (Note 3)
D
D
GS
D
DD
DD
DD
DS
DS
= 15.4 W
= 5.8 W
= 40 W
= 15 V,
= 0 V,
= 40 V,
= 40 V,
= 40 V,
= 15 V,
J
4
= 125°C
Symbol
t
t
t
t
t
t
ESD
Q
V
d(on)
d(off)
d(on)
d(off)
d(on)
d(off)
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
t
t
t
SD
RR
rr
a
b
r
f
r
f
r
f
T
1
2
T
1
2
5000
Min
500
1525
1530
1160
1275
1860
1150
2220
1180
0.81
0.66
375
325
190
710
730
200
530
Typ
4.5
0.9
2.6
3.9
1.0
1.7
6.3
Max
1.5
Unit
nC
nC
mC
ns
ns
ns
ns
V
V