NCV8440 ON Semiconductor, NCV8440 Datasheet - Page 2

• Manufacturer Part Number: NCV8440
• Description: Protected Power MOSFET
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in
2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in
MAXIMUM RATINGS
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage − Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy
(V
Load Dump Voltage (V
Thermal Resistance,
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
DD
= 50 V, I
D(pk)
= 1.17 A, V
GS
(T
= 0 and 10 V, R
J
A
= 25°C unless otherwise noted)
+
−
= 25°C (Note 1)
GS
VGS
= 10 V, L = 160 mH, R
I
G
I
= 2.0 W, R
Figure 1. Voltage and Current Convention
Rating
L
= 9.0 W, td = 400 ms)
GATE
G
http://onsemi.com
= 25 W)
− Single Pulse (t
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
2
− Continuous @ T
I
D
SOURCE
DRAIN
2
p
).
= 10 ms) (Note 1)
A
= 25°C
2
).
VDS
Symbol
T
V
R
R
J
V
E
V
I
P
, T
T
DSS
DM
I
qJA
qJA
GS
D
AS
LD
+
−
D
L
stg
−55 to 150
52−59
Value
1.69
±15
169
260
110
2.6
10
60
74
°C/W
Unit
mJ
°C
°C
W
V
V
A
V