nus3055 ON Semiconductor, nus3055 Datasheet

no-image

nus3055

Manufacturer Part Number
nus3055
Description
Low Profile Overvoltage Protection Ic With Integrated Mosfet
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
nus3055MUTAG
Manufacturer:
ON/安森美
Quantity:
20 000
NUS3055MUTAG
Low Profile Overvoltage
Protection IC with
Integrated MOSFET
combining the NCP345 overvoltage protection circuit (OVP) with a
30 V P−channel power MOSFET. It is specifically designed to protect
sensitive electronic circuitry from overvoltage transients and power
supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
AC−DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. It has a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell Li−Ion as
well as 3/4 cell NiCD/NiMH applications.
Features
Benefits
Applications
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
This device represents a new level of safety and integration by
The OVP IC is optimized for applications that use an external
for Portable Applications
OvervoltageTurn−Off Time of Less Than 1.0 ms
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
High Accuracy Undervoltage Threshold of 2.0%
−30 V Integrated P−Channel Power MOSFET
Low R
Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable
Maximum Solder Reflow Temperature @ 260°C
This device is manufactured with a Pb−Free external lead finish only.
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
DS(on)
= 75 mW @ −4.5 V
†For information on tape and reel specifications,
NUS3055MUTAG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
1
GATE
XXXX = Specific Device Code
A
Y
WW
G
OUT
SRC
VCC 8
ORDERING INFORMATION
PIN CONNECTIONS
8
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
7
6
5
(Bottom View)
CASE 517AH
(Pb−Free)
Package
TLLGA8
TLLGA8
DRAIN
Publication Order Number:
4
3000 Tape & Reel
1
2
3
4
1
MARKING
DIAGRAM
IN
GND
CNTRL
DRAIN
Shipping
AYWW
XXXX
NUS3055/D
G

Related parts for nus3055

nus3055 Summary of contents

Page 1

... View) ORDERING INFORMATION Device Package Shipping NUS3055MUTAG TLLGA8 3000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NUS3055/D G † ...

Page 2

... SRC CC P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3055 CNTRL GND Microprocessor Port Figure 1. Simplified Schematic Pin Description , thus disconnecting the P−Channel Power MOSFET. The which disconnects the FET. If this pin is not used, CC falls below 2.8 V (nom), the OUT pin will be driven to within 1 ...

Page 3

... Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 oz] including traces). 2. Human body model (HBM): MIL STD 883C Method 3015− 1500 100 pF pulses delay 1 s). NUS3055MUTAG Pin 7 1 ...

Page 4

... Drain to Source Breakdown Voltage = −250 mA Gate Threshold Voltage = −250 mA Switching characteristics are independent of operating junction temperature. NUS3055MUTAG (T = 25°C, Vcc = 6.0 V, unless otherwise specified) A Symbol Pin V 8 CC(opt) − increasing Input ...

Page 5

... TYPICAL PERFORMANCE CURVES 7.05 7.00 6.95 6.90 6.85 6.80 6.75 6.70 −40 −25 − Ambient Temperature (°C) Figure 2. Typical V Threshold Variation vs. th Temperature NUS3055MUTAG (T = 25°C, unless otherwise specified) A OVERVOLTAGE PROTECTION IC 1.0 0.9 0.8 0.7 0.6 0.5 −40 −25 − Figure 3. Typical Supply Current vs. Temperature http://onsemi.com Temperature (°C) ...

Page 6

... J 10000 1000 T = 100°C J 100 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 6. Drain−to−Source Leakage Current vs. Voltage NUS3055MUTAG TYPICAL PERFORMANCE CURVES (T = 25°C, unless otherwise specified P−CHANNEL MOSFET −4 V 0.2 −3.8 V −3.6 V 0.1 −3.4 V −3.2 V − ...

Page 7

... Figure 8. Test Circuit for T Input Voltage Output Voltage NUS3055MUTAG = 25°C, unless otherwise specified P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3055 CNTRL GND and OFF Test =25°C A Figure 9. T Waveforms ON IN http://onsemi.com ...

Page 8

... IN 6 Vdc 8 Vdc GND Figure 11. Test Circuit for T NUS3055MUTAG T OFF IN Input Voltage T Test OFF IN T =25°C A Output Voltage Waveforms OFF P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3055 CNTRL and OFF CT http://onsemi.com 8 GATE 12 W OUT ...

Page 9

... NUS3055MUTAG CNTR signal Input Voltage Output Voltage Figure 12 CNTR signal Figure 13. T OFF CT http://onsemi.com Test =25°C A Waveforms T OFF CT Input Voltage T Test OFF CT T =25°C A Output Voltage Waveforms ...

Page 10

... PITCH Ç Ç Ç Ç 1.50 DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS3055/D 0.03 ...

Related keywords