nus3055 ON Semiconductor, nus3055 Datasheet - Page 3

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nus3055

Manufacturer Part Number
nus3055
Description
Low Profile Overvoltage Protection Ic With Integrated Mosfet
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
nus3055MUTAG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
MAXIMUM RATINGS
OUT Voltage to GND
Input and CNTRL Pin Voltage to GND
V
Maximum Power Dissipation (Note 1)
Thermal Resistance Junction−to−Air (Note 1)
Junction Temperature
Operating Ambient Temperature
V
Storage Temperature Range
ESD Performance (HBM) (Note 2)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current, Steady State, T
CC
CNTRL
Maximum Range
Operating Voltage
(T
A
= 25°C unless otherwise stated)
Rating
A
= 25°C (Note 1)
P−Channel FET
NUS3055MUTAG
OVP IC
http://onsemi.com
3
1, 2, 3, 7, 8
Pin
7
1
3
8
3
V
Symbol
V
CC(max)
V
V
CNTRL
R
V
T
V
P
input
T
T
DSS
I
θJA
stg
GS
D
O
D
A
J
−0.3
−0.3
−0.3
−0.3
Min
−40
−65
−20
2.5
0
Max
−1.0
342
124
150
150
−30
1.0
5.0
30
30
13
30
85
20
°C/W
Unit
kV
°C
°C
°C
W
V
V
V
V
V
V
A

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