nus3065mu ON Semiconductor, nus3065mu Datasheet

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nus3065mu

Manufacturer Part Number
nus3065mu
Description
Low Profile Overvoltage Protection Ic With Integrated Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NUS3065MU
Low Profile Overvoltage
Protection IC with
Integrated MOSFET
combining the NCP345 overvoltage protection circuit (OVP) with a
30 V P−channel power MOSFET. It is specifically designed to protect
sensitive electronic circuitry from overvoltage transients and power
supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
AC−DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. It has a nominal overvoltage
threshold of 6.85 V which makes them ideal for single cell Li−Ion as
well as 3/4 cell NiCD/NiMH applications.
Features
Benefits
Applications
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 0
This device represents a new level of safety and integration by
The OVP IC is optimized for applications that use an external
for Portable Applications
OvervoltageTurn−Off Time of Less Than 1.0 ms
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
High Accuracy Undervoltage Threshold of 2.0%
−30 V Integrated P−Channel Power MOSFET
Low R
Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable
Maximum Solder Reflow Temperature @ 260°C
This device is manufactured with a Pb−Free external lead finish only.
This is a Pb−Free Device
Provide Battery Protection
Integrated Solution Offers Cost and Space Savings
Integrated Solution Improves System Reliability
Portable Computers and PDAs
Cell Phones and Handheld Products
Digital Cameras
DS(on)
= 66 mW @ −4.5 V
†For information on tape and reel specifications,
NUS3065MUTAG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
1
GATE
3065
A
Y
WW
G
OUT
SRC
VCC 8
ORDERING INFORMATION
PIN CONNECTIONS
8
http://onsemi.com
7
6
5
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Bottom View)
CASE 517AH
(Pb−Free)
Package
TLLGA8
TLLGA8
DRAIN
Publication Order Number:
4
1
2
3
4
1
MARKING
DIAGRAM
Tape & Reel
IN
GND
CNTRL
DRAIN
Shipping
AYWW
3000 /
3065
NUS3065/D
G

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nus3065mu Summary of contents

Page 1

... SRC DRAIN 5 4 (Bottom View) ORDERING INFORMATION Device Package Shipping NUS3065MUTAG TLLGA8 3000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: ...

Page 2

... V Positive Voltage supply disconnecting the P−channel FET. OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE IN CNTRL < < > > NUS3065MU V SRC CC P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3065 CNTRL GND Microprocessor Port Figure 1. Simplified Schematic Pin Description , thus disconnecting the P− ...

Page 3

... Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 oz] including traces). 2. Human body model (HBM): MIL STD 883C Method 3015− 1500 100 pF pulses delay 1 s). NUS3065MU Pin 7 1 ...

Page 4

... Drain to Source Breakdown Voltage = −250 mA Gate Threshold Voltage = −250 mA Switching characteristics are independent of operating junction temperature. NUS3065MU (T = 25°C, Vcc = 6.0 V, unless otherwise specified) A Symbol Pin V 8 CC(opt) − increasing Input ...

Page 5

... Figure 2. Typical V Threshold Variation vs. th Temperature 100 Figure 4. Typical Maximum Drain Peak Current vs Pulse Width (Non−repetitive Single Pulse, V NUS3065MU (T = 25°C, unless otherwise specified) A OVERVOLTAGE PROTECTION IC 1.0 0.9 0.8 0.7 0.6 0.5 −40 −25 − Figure 3. Typical Supply Current vs. Temperature ...

Page 6

... J 10000 1000 T = 100°C J 100 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 7. Drain−to−Source Leakage Current vs. Voltage NUS3065MU TYPICAL PERFORMANCE CURVES (T = 25°C, unless otherwise specified P−CHANNEL MOSFET −4 V 0.2 −3.8 V −3.6 V 0.1 −3.4 V −3.2 V − ...

Page 7

... TYPICAL APPLICATION CIRCUITS & OPERATION WAVEFORMS ( Vdc 8 Vdc Figure 9. Test Circuit for T Input Voltage Output Voltage NUS3065MU = 25°C, unless otherwise specified P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3065 CNTRL GND and OFF ...

Page 8

... Figure 11 Vdc 8 Vdc GND Figure 12. Test Circuit for T NUS3065MU T OFF IN Input Voltage T Test OFF IN T =25°C A Output Voltage Waveforms OFF P−CH Undervoltage Lock Out + FET Logic − Driver V ref NUS3065 CNTRL and OFF CT http://onsemi.com 8 GATE ...

Page 9

... NUS3065MU CNTR signal Input Voltage Output Voltage Figure 13 CNTR signal Figure 14. T OFF CT http://onsemi.com Test =25°C A Waveforms T OFF CT Input Voltage T Test OFF CT T =25°C A Output Voltage Waveforms ...

Page 10

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NUS3065MU PACKAGE DIMENSIONS LLGA8 3x2.5, 0.65P CASE 517AH ISSUE A ...

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