nus3065mu ON Semiconductor, nus3065mu Datasheet - Page 3

• Manufacturer Part Number: nus3065mu
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).
MAXIMUM RATINGS
OUT Voltage to GND
Input and CNTRL Pin Voltage to GND
V
Maximum Power Dissipation (Note 1)
Thermal Resistance Junction−to−Air (Note 1)
Junction Temperature
Operating Ambient Temperature
V
Storage Temperature Range
ESD Performance (HBM) (Note 2)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current, Steady State, T
Drain Current, Peak (Note 1)
P
CC
CNTRL
W
= 500 ms, T
Maximum Range
Operating Voltage
A
= 80°C
(T
A
= 25°C unless otherwise stated)
Rating
A
= 25°C (Note 1)
P−Channel FET
OVP IC
http://onsemi.com
NUS3065MU
3
1, 2, 3, 7, 8
Pin
7
1
3
8
−
−
−
−
3
−
V
Symbol
V
CC(max)
V
V
CNTRL
R
V
I
T
DPK
V
P
input
T
T
DSS
I
qJA
−
stg
−
GS
D
O
D
A
J
−0.3
−0.3
−0.3
−0.3
Min
−40
−65
−20
2.5
−
−
−
0
Max
−1.0
−4.0
342
124
150
150
−30
1.0
5.0
30
30
13
30
85
20
−
°C/W
Unit
kV
°C
°C
°C
W
V
V
V
V
V
V
A
A