stm6914 SamHop Microelectronics Corp., stm6914 Datasheet

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stm6914

Manufacturer Part Number
stm6914
Description
Dual N-channel Enhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STM6914
Manufacturer:
ST
0
Part Number:
STM6914
Manufacturer:
SAMHOP
Quantity:
20 000
Dual N-Channel Enhancement Mode Field Effect Transistor
Details are subject to change without notice.
Symbol
V
V
I
I
P
ABSOLUTE MAXIMUM RATINGS ( T
T
THERMAL CHARACTERISTICS
R
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
D
a
PRODUCT SUMMARY
T
JA
V
STG
30V
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
6.5A
I
D
S O-8
R
-Pulsed
DS(ON)
32 @ VGS=10V
52 @ VGS=4.5V
b
(m
1
a
) Max
A
=25 ° C unless otherwise noted )
a
T
T
T
T
A
A
A
A
=25 ° C
=70 ° C
=25 ° C
=70 ° C
FEATURES
a
Super high dense cell design for low R
Rugged and reliable.
Suface Mount Package.
1
D
D
D
D
2
1
1
2
5
6
7
8
Green
Product
STM6914
-55 to 150
Limit
1.28
±20
62.5
6.5
5.2
30
24
2
2
4
3
1
www.samhop.com.tw
DS(ON)
G
S
G
S
2
1
2
1
.
Oct,23,2008
Units
°C/W
W
°C
W
A
Ver 1.0
V
V
A
A

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stm6914 Summary of contents

Page 1

... Suface Mount Package =25 ° C unless otherwise noted ) A =25 ° =70 ° =25 ° =70 ° STM6914 Green Product . DS(ON Limit 30 ±20 6.5 5 1.28 -55 to 150 62 ...

Page 2

... STM6914 ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance ISS Output Capacitance C OSS Reverse Transfer Capacitance ...

Page 3

... STM6914 25 V =10V = 0.5 1 Drain-to-Source Voltage(V) DS Figure 1. Output Characteristics Drain Current(A) D Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Tj, Junction Temperature( ° Figure 5. Gate Threshold Variation ...

Page 4

... STM6914 Gate-to-Source Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 900 750 600 450 300 Coss 150 Crss Drain-to-Source Voltage(V) DS Figure 9. Capacitance 1000 100 10 VDS=15V,ID=1A 1 VGS=10V Rg, Gate Resistance( Figure 11. switching characteristics I =6.5A D 125 C ...

Page 5

... STM6914 20V 0 Inductive Te t Circuit Unclamped F igure 13a 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.00001 0.0001 15V D R IVE Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Unclamped Inductive W ave F igure 13b ...

Page 6

... STM6914 PACKAGE OUTLINE DIMENSIONS SO 0.015X45 e 0.05 TYP OLS 0.008 TYP. B 0.016 TYP. MILLIME MIN MAX 1.75 1.35 0.25 0.10 4.98 4.80 3.81 3.99 5.79 6.20 0.41 1. INC HE S MIN MAX 0.053 0.069 0.004 0.010 0.189 0.196 0.157 0.150 0.228 0.244 0.016 0.050 8 0 www.samhop.com.tw Ver 1 ...

Page 7

... STM6914 SO-8 Carrier Tape D1 A0 SECTION A-A unit PACKAGE SOP 8N 6.50 5.25 0.15 150 0.10 SO-8 Reel UNIT: TAPE SIZE REEL SIZE 12 330 SO-8 Tape and Reel Data TERMINAL NUMBER FEEDING DIRECTION 12.0 2.10 1.5 1.55 1.75 +0.3 (MIN) 0.10 0.10 0. 330 62 12.4 16.8 12.75 1 0 5.5 8.0 2.0 0.30 4.0 0.10 0.10 0.013 ...

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