stm6610 SamHop Microelectronics Corp., stm6610 Datasheet - Page 3

• Manufacturer Part Number: stm6610
• Description: Dual N-c Hannel E Nhancement Mode Field E Ffect Transistor
• Manufacturer: SamHop Microelectronics Corp.

S T M6610
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board,t 10sec.
b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.
c.Guaranteed by design,not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
F igure 3. On-R es is tance vs . Drain C urrent
Parameter
45
36
27
18
42
35
28
21
14
9
0
7
1
0
1
Figure 1. Output Characteristics
V
GS
=10V
V
0.5
DS
9
, Drain-to-Source Voltage (V)
I
D
V
and G ate V oltage
, Drain C urrent (A)
GS
1
=4V
18
V
V
V
GS
G S
G S
=4.5V
1.5
=4.5V
=10V
27
V
2
V
V
GS
GS
GS
=3.5V
=2.5V
A
=3V
=25 C unless otherwise noted)
Symbol
36
2.5
V
SD
b
45
3
3
V
GS
Condition
F igure 4. On-R es is tance Variation with
1.5
1.4
1.3
1.2
1.1
1.0
= 0V, Is =1.7A
20
16
12
8
4
0
0
0
0
Figure 2. Transfer Characteristics
T j, J unction T emperature ( C )
Drain C urrent and Temperature
0.7
25
V
GS
V
, Gate-to-Source Voltage (V)
G S
I
D
1.4
50
=8A
=10V
Tj=125 C
25 C
2.1
75
Min Typ Max Unit
V
G S
I
D
100
=4.5V
=5A
2.8
-55 C
0.8
125
3.5
C
T j( C )
150
4.2
1.2
V
5