bh616uv1610aig55 Brillance Semiconductor, bh616uv1610aig55 Datasheet - Page 5
![no-image](/images/no-image-200.jpg)
bh616uv1610aig55
Manufacturer Part Number
bh616uv1610aig55
Description
Ultra Low Power/high Speed Cmos Sram 1m X 16 Bit
Manufacturer
Brillance Semiconductor
Datasheet
1.BH616UV1610AIG55.pdf
(10 pages)
n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (READ CYCLE)
R0201-BH616UV1610
READ CYCLE
READ CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
E1LQV
E2LQV
E1LQX
E2LQX
E1HQZ
E2HQZ
GLQV
GLQX
BHQZ
GHQZ
AVAX
AVQX
BLQV
BLQX
AVQX
ADDRESS
D
OUT
(1,2,4)
PARANETER
NAME
t
t
t
t
t
t
t
t
t
ACS1
ACS2
CHZ1
CHZ2
t
t
t
t
CLZ1
CLZ2
t
t
BDO
OHZ
OLZ
RC
OE
OH
AA
BA
BE
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Select to Output High Z
Chip Select to Output High Z
Data Byte Control to Output High Z
Output Enable to Output High Z
Data Hold from Address Change
A
t
OH
= -40
DESCRIPTION
O
C to +85
t
AA
5
O
t
C)
RC
(LB, UB)
(LB, UB)
(LB, UB)
(CE1)
(CE2)
(CE1)
(CE2)
(CE1)
(CE2)
MIN.
55
10
10
10
10
--
--
--
--
--
5
--
--
--
--
CYCLE TIME : 55ns
BH616UV1610
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
t
OH
MAX.
55
55
55
55
30
25
25
25
25
--
--
--
--
--
--
Revision
May.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
1.2