cat808ntfi-35 Catalyst Semiconductor, cat808ntfi-35 Datasheet

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cat808ntfi-35

Manufacturer Part Number
cat808ntfi-35
Description
Low-power Precision Voltage Detector
Manufacturer
Catalyst Semiconductor
Datasheet
Low-Power Precision Voltage Detector
FEATURES
APPLICATIONS
PIN CONFIGURATION
© 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
For Ordering Information details, see page 7.
GND
OUT
V
Ultra Low Current Consumption 2.4µA
Accurate Voltage Detection Threshold
Fine Voltage Detection Threshold Resolution
Open Drain Output (Active Low)
Industrial temperature range -40°C to +85°C
5-pin TSOT-23 and 3-pin SOT-89 RoHS
compliant packages
Battery-Powered Systems
Power Supply Monitoring
Handheld and Portable Equipment
Processor Supervisor Reset
DD
1
2
3
SOT-89
GND
OUT
V
DD
5-Lead Thin SOT-23
1
2
3
5
4
NC
NC
1
DESCRIPTION
The CAT808 is a high-precision voltage detector
designed for monitoring single cell and multi-cell batteries.
Voltage detection thresholds between 2.0V and 3.5V are
provided with 0.1V resolution and ±3.0% accuracy.
The CAT808 open-drain output is active low until the
V
hysteresis is built into the device to minimize output
“chatter”, while V
threshold, and the output transitions high.
After the CAT808 asserts the output high condition, it
continues to monitor V
detection threshold, when the output goes low until
V
TYPICAL APPLICATION
Note: The value of the pull-up resistor is not critical
DD
DD
Battery
Voltage
once again exceeds the detection threshold.
voltage exceeds the detection threshold. A low
V
DD
DD
CAT808
GND
passes through the detection
OUT
DD
until it drops below the
10kΩ
SHDN
CONVERTER
CAT808
Doc. No. 3024 Rev. B
DC-DC
GND
IN
OUT

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cat808ntfi-35 Summary of contents

Page 1

... GND GND © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice DESCRIPTION The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.5V are provided with 0.1V resolution and ±3.0% accuracy. ...

Page 2

... V + 2.0 DD -2.0 to 7.0 +300 250 500 Ratings +1.2 to +6.0 -40 to +85 Min Typ. Max 2.62 2.7 2.78 3.12 3.2 3.28 3.42 3.5 3. 0.6 1 ±10 ±100 ppm/ºC +1V. CC © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice Units ºC º º Units V ºC Units V µA mA µA µs ...

Page 3

... Voltage Input and Power Supply DD GND Ground Pin ¯¯¯¯ Active Low Open Drain output OUT NC No Connect, the pin is electrically open © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice BLOCK DIAGRAM ). The open- V DET DD is above DD ...

Page 4

... Doc. No. 3024 Rev Detection Voltage vs. Temperature DET 2.71 2.705 2 2.695 -40 I Transistor Output Current vs. V OUT 10.00 8.00 T PLH 6.00 4.00 2.00 T PHL 0.00 10 100 0.01 0.1 1. 100 Temperature (ºC) Supply Voltage DD -40ºC +25ºC +90ºC 1.50 2.00 2.50 V (V) DD © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice ...

Page 5

... PACKAGE INFORMATION 5-LEAD TSOT-23 PACKAGE Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC specification MO-193. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice SYMBOL MIN NOM A — — A1 0.01 0.05 A2 0.80 0.87 b 0.30 — c 0.12 0.15 D 2.90BSC E 2.80BSC E1 1.60BSC e 0 ...

Page 6

... Notes: (1) All dimensions are in millimeters. (2) Lead frame material: copper. Doc. No. 3024 Rev SYMBOL MIN NOM A 1.40 1.50 A1 0.30 0.40 L 0.80 – b 0.36 0.42 b1 0.41 0.47 C 0.38 0.40 D 4.40 4.50 D1 1.40 1.60 H 3.94 – E 2.40 2.50 e1 2.90 3.00 e 1.45 1.50 6 MAX 1.60 0.50 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 1.55 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice ...

Page 7

... TSOT-23-5 CAT808NTDI-35-G TSOT-23-5 CAT808NTFI-27 SOT-89 CAT808NTFI-32 SOT-89 CAT808NTFI-35 SOT-89 Notes: (1) ym – Year and Month Code. (2) xxx – Assembly location code and last 2 digits of assembly lot code. (3) SOT-89 is offered in Matte-Tin only. © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice ...

Page 8

... Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur ...

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