ap15t03gh APEC, ap15t03gh Datasheet

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ap15t03gh

Manufacturer Part Number
ap15t03gh
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet
▼ ▼ ▼ ▼ Lower Gate Charge
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Fast Switching Characteristic
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15T03GJ) is available for low-profile applications.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
12.5
±20
6.4
0.1
30
12
50
DS(ON)
G
DSS
D
Value
AP15T03GH/J
S
110
10
G D
S
TO-251(J)
TO-252(H)
80mΩ
Units
W/℃
Units
℃/W
℃/W
30V
12A
200601041
W
V
V
A
A
A

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ap15t03gh Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter Max. Max. AP15T03GH/J Pb Free Plating Product BV 30V DSS R 80mΩ DS(ON) I 12A TO-252( ...

Page 2

... AP15T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V 1 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1 1.0 0.5 0.0 -50 1.4 1 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP15T03GH/J 10V o C 7.0V 5.0V 4.5V V =3.0V G 1.0 1.5 2.0 2.5 3.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 o ,Junction Temperature ( C) ...

Page 4

... AP15T03GH =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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