ap15t03gh APEC, ap15t03gh Datasheet - Page 2

• Manufacturer Part Number: ap15t03gh
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15T03GH/J
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
DSS
/ΔT
j
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
j
j
=25
=150
=25
o
C)
o
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=8A, V
=8A,
=8A
=8A
=1.88Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=24V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=4.5V
=0V
GS
V
Test Conditions
Test Conditions
GS
, I
GS
D
D
=0V
=250uA
D
D
=0
D
=250uA
GS
GS
GS
=8A
=8A
=5A
V
=10V
=0V
=0V
,
D
=1mA
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.02
Typ.
280
1.4
2.4
2.4
1.1
22
11
70
47
17
7
4
6
7
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
100
450
1.3
80
25
3
1
7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
Ω
V