flc057wg Eudyna Devices Inc, flc057wg Datasheet

flc057wg

Manufacturer Part Number

flc057wg

Description

C-band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLC057WG.pdf (4 pages)

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Edition 1.1

July 1999

CASE STYLE: WG

FEATURES

• High Output Power: P 1dB = 27.0dBm(Typ.)

• High Gain: G 1dB = 9.0dB(Typ.)

• High PAE: η add = 38%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC057WG is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 1000Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

g m

R th

Symbol

V p

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 125mA

V DS = 5V, I DS =10mA

I GS = -10µA

V DS = 10V

I DS ≈ 0.6 I DSS (Typ.),

f = 8 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

25.5

-1.0

8.0

-5

-65 to +175

Rating

FLC057WG

Limit

Typ.

3.75

27.0

175

-2.0

200

100

9.0

-5

G.C.P.: Gain Compression Point

Max.

300

-3.5

°C/W

dBm

Unit

°C

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flc057wg Summary of contents

Page 1

... High PAE: η add = 38%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC057WG C-Band Power GaAs FET POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V ≈ 0.6 I DSS 6 GHz 26 P out 24 6 GHz 22 20 η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLC057WG C-Band Power GaAs FET S 21 +90° 1GHz 0° . .04 .06 .08 -90° ...

Page 4

... FLC057WG C-Band Power GaAs FET 2-Ø1.6±0.01 (0.063) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11 0.5 (0.020) 8.5±0.2 2.5 Max. (0.335) (0.098) 1. Gate 2. Source 3. Drain 4. Source 6.1±0.1 (0.240) Unit: mm(inches) 4 0.1±0.05 (0.004) 0.8±0.1 (0.031) ...

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