hcs190ms Intersil Corporation, hcs190ms Datasheet

hcs190ms

Manufacturer Part Number

hcs190ms

Description

Radiation Hardened Synchronous 4-bit Up/down Counter

Manufacturer

Intersil Corporation

Datasheet

1.HCS190MS.pdf (9 pages)

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September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

• Input Current Levels Ii

Description

The Intersil HCS190MS is an asynchronously presettable BCD

Decade synchronous counter. Presetting the counter to the

number on the preset data inputs (P0 - P3) is accomplished by a

low on the parallel load input (PL). Counting occurs when (PL) is

high, Count Enable (CE) is low and the Up/Down (U/D) input is

either low for up-counting or high for down-counting. The counter

is incremented or decremented synchronously with the low-to-high

transition of the clock.

When an overﬂow or underﬂow of the counter occurs, the Terminal

Count output (TC), which is low during counting, goes high and

remains high for one clock cycle. This output can be used for look-

ahead carry in high speed cascading. The TC output also initiates

the Ripple Clock output (RC) which, normally high, goes low and

remains low for the low-level portion of the clock pulse. These

counter can be cascaded using the Ripple Carry output.

If the decade counter is preset to an illegal state or assumes an

illegal state when power is applied, it will return to the normal

sequence in one or two counts.

The HCS190MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS190MS is supplied in a 16 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

HCS190DMSR

HCS190KMSR

HCS190D/Sample

HCS190K/Sample

HCS190HMSR

(Typ)

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

PART NUMBER

RAD (Si)/s 20ns Pulse

5 A at VOL, VOH

TEMPERATURE RANGE

C to +125

RAD (Si)/s

-55

C to +125

+25

-9

/mg

Errors/Bit-Day

260

Intersil Class S Equivalent

Sample

Die

SCREENING LEVEL

Pinouts

H = High Voltage Level

L = Low Voltage Level

GND

Radiation Hardened Synchronous

U/D

HCS190MS

FLATPACK PACKAGE (FLATPACK)

16 LEAD CERAMIC DUAL-IN-LINE

16 LEAD CERAMIC METAL SEAL

METAL SEAL PACKAGE (SBDIP)

GND

INPUTS

U/D

MIL-STD-1835 CDFP4-F16

MIL-STD-1835 CDIP2-T16

4-Bit Up/Down Counter

TRUTH TABLE

U/D

TOP VIEW

16 Lead SBDIP

16 Lead Ceramic Flatpack

16 Lead SBDIP

16 Lead Ceramic Flatpack

Die

X = Immaterial

Spec Number

=Positive Transistion

File Number

PACKAGE

VCC

Count Up

Count Down

Preset

No Change

FUNCTION

OUTPUT

518836

2251.2

VCC

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hcs190ms Summary of contents

Page 1

... The HCS190MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS190MS is supplied lead Ceramic ﬂatpack (K sufﬁ SBDIP Package (D sufﬁx). Ordering Information PART NUMBER ...

Page 2

... VIL = 1.35V, (Note 3) NOTES: 1. All voltages reference to device GND. 2. Force/Measure functions may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Speciﬁcations HCS190MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . ...

Page 3

... VCC = 4.5V, VIH = 4.5V, VIL = TPLH VCC = 4.5V, VIH = 4.5V, VIL = 0V TPHL VCC = 4.5V, VIH = 4.5V, VIL = 0V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = 50pF, Input 3ns. Speciﬁcations HCS190MS GROUP (NOTES SUB- CONDITIONS GROUPS TEMPERATURE 9 10, 11 +125 9 10, 11 +125 ...

Page 4

... TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Supply Current ICC VCC = 5.5V, VIN = VCC or GND Output Current IOH VCC = VIH = 4.5V, (Source) VOUT = VCC -0.4V, VIL = 0 Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 Speciﬁcations HCS190MS CONDITIONS NOTES TEMPERATURE 1 1 +125 1 1 +125 1 1 +125 1 1 ...

Page 5

... All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH Speciﬁcations HCS190MS (NOTE 1) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT ...

Page 6

... Each pin except VCC and GND will have a series resistor of 1K OPEN 12, 13 NOTE: Each pin except VCC and GND will have a resistor of 47K Subgroup 2, sample size is 4 dice/wafer 0 failures. Speciﬁcations HCS190MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 7

... Sales Ofﬁce Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 HCS190MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs. min., o +125 C min., Method 1015 ...

Page 8

... VIL TSU EN INPUT VIH VS VIL TH = Hold Time TSU = Setup Time TW = Pulse Width AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 HCS190MS Propagation Delay Load Circuit DUT TPHL TTHL 80% 20% UNITS Propagation Delay Load Circuit DUT TH TW UNITS ...

Page 9

... Q0 (3) CE (4) U/D (5) Q2 (6) Q3 (7) NOTE: The die diagram is a generic plot from a similar HCS device intended to indicate approximate die size and bond pad location. The mask series for the HCS190 is TA14344A. HCS190MS HCS190MS 268 (15) P0 (14) CP (13) RC (12) TC (11) PL 518836 ...

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