hcs241ms Intersil Corporation, hcs241ms Datasheet
hcs241ms
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hcs241ms Summary of contents
Page 1
... The HCS241MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS241MS is supplied lead ceramic flatpack (K suffi SBDIP package (D suffix). Ordering Information PART NUMBER ...
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... Functional Diagram AO1 AI1 INPUTS AE AIn High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance HCS241MS AO2 AO3 AO4 BO1 BO2 AI2 AI3 AI4 BI1 BI2 ...
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... VIL = 1.35V (Note 3) NOTES: 1. All voltages referenced to device GND. 2. Force/Measure function may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Specifications HCS241MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . ...
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... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which would affect these characteristics. Specifications HCS241MS GROUP ...
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... All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH IOZ Specifications HCS241MS (NOTES 1, 2) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT ...
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... Each pin except VCC and GND will have a series resistor of 680 OPEN 12, 14, 16, 18 NOTE: Each pin except VCC and GND will have a series resistor of 47K Subgroup 2, sample size is 4 dice/wafer, 0 failures. Specifications HCS241MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...
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... Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 HCS241MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs. min., o +125 C min., Method 1015 ...
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... Three-State High Timing Diagram and Load Circuit VIH INPUT VS VSS TPZH VOH VT OUTPUT VOZ Three-State Low Timing Diagram and Load Circuit VIH INPUT VS VSS TPZL VOZ VT OUTPUT VOL HCS241MS DUT TPHL PARAMETER VCC VIH VIL VS GND DUT TPHZ VW THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH GND ...
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... Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness:13k 2.6k WORST CASE CURRENT DENSITY < 2 A/cm BOND PAD SIZE: 100 m x 100 m 4 mils x 4 mils Metallization Mask Layout AI2 (4) BO3 (5) AI3 (6) BO2 (7) HCS241MS HCS241MS 310 (18) AO1 (17) BI4 (16) AO2 (15) BI3 (14) AO3 518838 Spec Number ...