hcs27dmsr Intersil Corporation, hcs27dmsr Datasheet

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hcs27dmsr

Manufacturer Part Number
hcs27dmsr
Description
Rad-hard Triple 3-input Nor Gate
Manufacturer
Intersil Corporation
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
HCS27DMSR
Manufacturer:
a
Quantity:
4
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS27MS is a Radiation Hardened Triple 3-Input
NOR Gate. A Low on all inputs forces the output to a High state.
The HCS27MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS27MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Ordering Information
HCS27DMSR
HCS27KMSR
HCS27D/
Sample
HCS27K/
Sample
HCS27HMSR
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
o
o
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
LEVEL
C to +125
RAD (Si)/s
o
-9
C
14 Lead SBDIP
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
2
/mg
Errors/Bit-Day
PACKAGE
63
Pinouts
Functional Diagram
NOTE: L = Logic Level Low, H = Logic level High
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C
GND
A1
B1
A2
B2
C2
Y2
(13, 5, 11)
(2, 4, 10)
(1, 3, 9)
An
H
H
H
H
L
L
L
L
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
HCS27MS
An
Bn
Cn
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
GND
INPUTS
A1
B1
A2
B2
C2
Y2
Bn
H
H
H
H
Triple 3-Input NOR Gate
L
L
L
L
1
2
3
4
5
6
7
TRUTH TABLE
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
Cn
H
H
H
H
L
L
L
L
Spec Number
14
13
12
11
10
9
8
File Number
14
13
12
11
10
9
8
VCC
C1
Y1
C3
B3
A3
Y3
OUTPUTS
Yn
H
L
L
L
L
L
L
L
(12, 6, 8)
Yn
518766
3054.1
VCC
C1
Y1
C3
B3
A3
Y3

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hcs27dmsr Summary of contents

Page 1

... This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS27MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART TEMPERATURE SCREENING NUMBER RANGE o o HCS27DMSR - +125 C Intersil Class S Equivalent o o HCS27KMSR - +125 C ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Yn TPHL VCC = 4.5V Input to Yn TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Immunity FN VCC = 4.5V, VIH = 0.70(VCC), Functional Test VIL = 0.30(VCC), (Note 3) Input to Yn TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. ...

Page 5

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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