hcs253ms Intersil Corporation, hcs253ms Datasheet

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hcs253ms

Manufacturer Part Number
hcs253ms
Description
Radiation Hardened Dual 4-input Multiplexer
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS253MS is a Radiation Hardened 4-to-1 line
selector multiplexer having three-state outputs. One of four
sources for each section is selected by the common select inputs
S0 and S1. When the output enable (1OE or 2OE) is HIGH, the
output is in the high impedance state.
The HCS253MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS253MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS253DMSR
HCS253KMSR
HCS253D/Sample
HCS253K/Sample
HCS253HMSR
Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
PART NUMBER
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
1
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
SCREENING LEVEL
Pinouts
OE 1
GND
HCS253MS
I3 1
I2 1
I1 1
I0 1
Y 1
S1
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
OE 1
GND
I3 1
I2 1
I1 1
I0 1
Y 1
S1
Dual 4-Input Multiplexer
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Spec Number
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
File Number
9
PACKAGE
2 OE
S0
2 I3
2 I2
2 I1
2 I0
2 Y
VCC
518765
3068.1
2 OE
S0
2 I3
2 I2
2 I1
2 I0
2 Y
VCC

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hcs253ms Summary of contents

Page 1

... The HCS253MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS253MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER ...

Page 2

... SELECT INPUTS Select inputs S0 and S1 are common to both sections H = High Level Low Level Immaterial High Impedance (Off) HCS253MS 2I1 2I0 20E 9 2Y TRUTH TABLE DATA INPUTS ...

Page 3

... Functional Test VIH = 0.7 (VCC), VIL = 0.3 (VCC) (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO Specifications HCS253MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 4

... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.. Specifications HCS253MS GROUP (NOTES 1, 2) ...

Page 5

... AC measurements assume RL = 500 , CL = 50pF, Input 3ns, VIL = GND, VIH = VCC 3. For functional tests VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH IOZL/IOZH Specifications HCS253MS (NOTES 1, 2) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT ...

Page 6

... Each pin except VCC and GND will have a resistor of 680 OPEN 7, 9 NOTE: Each pin except VCC and GND will have a resistor of 47K Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCS253MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 7

... Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. HCS253MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 8

... Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VT 2.25 VW 0.90 GND 0 HCS253MS AC Load Circuit DUT TPHL CL = 50pF RL = 500 TTHL 80% 20% UNITS Three-State Low Load Circuit TPLZ VW UNITS ...

Page 9

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HCS253MS Three-State High Load Circuit DUT ...

Page 10

... Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 m x 100 m 4 mils x 4 mils Metallization Mask Layout (6) HCS253MS HCS253MS 10 (14) S0 (13 (12 (11 (10 518765 Spec Number ...

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