flc257mh-61 Eudyna Devices Inc, flc257mh-61 Datasheet
flc257mh-61
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flc257mh-61 Summary of contents
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... High PAE: η add = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...
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... FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER +10V ≈ 0.6 I DSS f = 6.4 GHz 33 P out Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...
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... Download S-Parameters, click here 3 FLC257MH +90° 5.5 6.5 5GHz 0° 7.5 7.5 .02 8 .04 .06 .08 -90° S22 MAG ANG .351 -157.1 .719 -163.9 .751 -167 ...
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... FLC257MH-6 C-Band Power GaAs FET 2-ø1.8±0.15 (0.071) Case Style "MH" Metal-Ceramic Hermetic Package 0.5 (0.020 3.5±0.3 (0.138) 6.7±0.2 (0.264) 10.0±0.3 (0.394) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) 4 0.1 (0.004) 1.65±0.15 (0.065) 2.8 Max (0.110) ...