mb95f204h Fujitsu Microelectronics, Inc., mb95f204h Datasheet - Page 58

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mb95f204h

Manufacturer Part Number
mb95f204h
Description
F2mc-8fx Mb95200h/210h Series
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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58
MB95200H/210H Series
6. Flash Memory Program/Erase Characteristics
*1: T
*2: T
*3: This value is converted from the result of a technology reliability assessment. (The value is converted from the
Chip erase time
Byte programming time
Erase/program voltage
Erase/program cycle
Power supply voltage at erase/
program
Flash memory data retention
time
result of a high temperature accelerated test by using the Arrhenius equation with the average temperature being
+85 °C) .
A
A
= + 25 °C, V
= + 85 °C, V
Parameter
CC
CC
= 5.0 V, 100000 cycles
= 4.5 V, 100000 cycles
20*
Min
9.5
4.5
3
100000
Value
Typ
1*
32
10
1
3600
Max
10.5
15*
5.5
2
cycle
Unit
year Average T
µs
V
V
s
00
excluded.
System-level overhead is excluded.
The erase/program voltage must be
applied to the RSTX pin in erase/program.
H
programming time prior to erasure is
A
= + 85 °C
Remarks
DS07-12623-1E

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