mc9s08qa4 Freescale Semiconductor, Inc, mc9s08qa4 Datasheet - Page 18

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mc9s08qa4

Manufacturer Part Number
mc9s08qa4
Description
Mc9s08qa4 8-bit Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Electrical Characteristics
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see MC9S08QA4 Series Reference Manual.
18
1
2
3
4
Supply voltage for program/erase
–40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
T
T = 25°C
L
to T
H
= –40°C to + 85°C
4
2
2
Characteristic
1
3
2
2
Table 14. Flash Characteristics
MC9S08QA4 Series, Rev. 2
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Mass
D_ret
Burst
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
5
100,000
Typical
20,000
4000
100
9
4
DD
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V

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