mc9s08mp16 Freescale Semiconductor, Inc, mc9s08mp16 Datasheet - Page 33

• Manufacturer Part Number: mc9s08mp16
• Description: 8-bit Hcs08 Central Processor Unit Cpu
• Manufacturer: Freescale Semiconductor, Inc

1
2
3
4
5
2.15
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
Num
2.16
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.16.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
Freescale Semiconductor
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
V
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale defines
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
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11
12
The frequency of this clock is controlled by a software setting.
1
2
3
4
5
6
7
8
9
DD
= 5.0 V, bus frequency = 4.0 MHz.
—
—
—
—
—
C
C
D
D
C
C
C
C
Flash Memory Specifications
EMC Performance
Radiated Emissions
Supply voltage for program/erase
-40°C to 125°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
5
Characteristic
2
2
3
3
Table 20. Flash Memory Characteristics
1
4
MC9S08MP16 Series Data Sheet, Rev. 1
2
2
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
Burst
Page
Mass
D_ret
Fcyc
prog
Read
DD
. These values are measured at room temperatures with
10,000
Min
150
2.7
2.7
15
—
—
5
100,000
Typical
20,000
4000
100
—
9
4
4
6
DD
supply. For more detailed
Electrical Characteristics
Max
6.67
200
5.5
5.5
—
—
—
—
—
cycles
years
Unit
t
t
t
t
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
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