mc9rs08ka8 Freescale Semiconductor, Inc, mc9rs08ka8 Datasheet - Page 23

• Manufacturer Part Number: mc9rs08ka8
• Description: Rs08 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

3.13
This section provides details about program/erase times and program-erase endurance for the flash memory. For detailed
information about program/erase operations, see the reference manual.
Freescale Semiconductor
1
2
3
Conversion time (including
sample time)
Sample time
Total unadjusted error
Differential non-linearity
Integral non-linearity
Zero-scale error
Full-Scale error
V
Quantization error
Input leakage error
pad leakage
Supply voltage for program/erase
Program/Erase voltage
V
Program
Mass erase
Typical values assume Temp = 25 qC, f
not tested in production.
1 LSB = (V
Based on input pad leakage current. Refer to pad electrical.
ADIN
PP
current
= V
Characteristic
DDA
Flash Specifications
REFH
3
* R
AS
– V
REFL
Characteristic
)/2
N
Table 15. 10-bit ADC Characteristics (continued)
Short sample (ADLSMP=0)
Long sample (ADLSMP=1)
Short sample (ADLSMP=0)
Long sample (ADLSMP=1)
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
Preliminary—Subject to Change Without Notice
ADCK
Conditions
Table 16. Flash Characteristics
=1.0 MHz unless otherwise stated. Typical values are for reference only and are
MC9RS08KA8 Series, Rev. 1
Monotonicity and No-Missing-Codes guaranteed
I
I
VPP_erase
Symbol
VPP_prog
V
V
C
P
P
C
P
C
P
P
D
D
T
T
T
DD
PP
Symb
E
t
t
DNL
E
E
INL
ADC
ADS
E
E
TUE
ZS
FS
Q
IL
11.8
Min
2.7
—
—
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typical
12
—
—
—
Typical
23.5
r0.5
r0.5
r0.3
r0.5
r0.3
r0.5
r0.5
r0.5
r0.5
r0.2
r0.1
3.5
20
40
r1
—
—
1
Electrical Characteristics
1
Max
12.2
200
100
5.5
Max
r2.5
r1.0
r1.0
r0.5
r1.0
r0.5
r1.5
r0.5
r1.5
r0.5
r0.5
r0.5
r2.5
r1
—
—
—
—
Unit
ADCK
cycles
ADCK
cycles
LSB
LSB
LSB
LSB
LSB
LSB
LSB
PA
PA
Unit
V
V
2
2
2
2
2
2
2
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