mc9rs08ka8 Freescale Semiconductor, Inc, mc9rs08ka8 Datasheet - Page 24

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mc9rs08ka8

Manufacturer Part Number
mc9rs08ka8
Description
Rs08 Central Processor Unit
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Electrical Characteristics
24
1
2
3
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
Typicals are measured at 25qC.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
hv
to T
Bus
to PGM/MASS setup time
rise time
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
H
< 10 MHz
PP
= –40qC to 85qC
me
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
& t
3
hold time
hv
applied to device)
Figure
Characteristic
22.
2
Table 16. Flash Characteristics (continued)
Preliminary—Subject to Change Without Notice
12 V
Figure 22. Example V
MC9RS08KA8 Series, Rev. 1
100:
Symbol
t
V
hv_total
t
t
t
D_ret
t
t
t
t
nvh1
t
prog
t
t
t
Read
t
pgs
nvh
vph
nvs
vps
me
vrs
rcv
hv
PP
PP
Filtering
1 nF
power source is recommended. An example V
1000
Min
500
100
200
1.8
V
20
10
20
20
15
5
5
1
PP
Typical
1
Freescale Semiconductor
Max
5.5
40
8
2
cycles
hours
years
Unit
ms
ms
Ps
Ps
Ps
Ps
Ps
ns
ns
ns
Ps
V
PP

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