l2721 Polyfet RF Devices, l2721 Datasheet
l2721
Manufacturer Part Number
l2721
Description
Rf Power Ldmos Transistor
Manufacturer
Polyfet RF Devices
Datasheet
1.L2721.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
L2721
Manufacturer:
polyfit
Quantity:
12 800
Part Number:
L2721
Manufacturer:
POLYFET
Quantity:
20 000
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
General Description
SYMBOL
SYMBOL
"Polyfet"
Silicon VDMOS and LDMOS
VSWR
gM
Idss
Igss
Rdson
Idsat
Ciss
Gps
Crss
Coss
Vgs
η
Bvdss
Dissipation
80
Device
Watts
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
Total
TM
PARAMETER
PARAMETER
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Common Source Power Gain
Load Mismatch Tolerance
Zero Bias Drain Current
Gate Leakage Current
Saturation Current
Drain Efficiency
Gate Bias for Drain Current
Saturation Resistance
Drain Breakdown Voltage
Forward Transconductance
process features
t
Case Thermal
polyfet rf devices
1.80 C/W
Resistance
Junction to
o
Temperature
RF CHARACTERISTICS (
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
Maximum
ABSOLUTE MAXIMUM RATINGS ( T =
Junction
200
o
C
-65 C to 150 C
POLYFET RF DEVICES
Temperature
MIN
MIN
o
2
11
36
Storage
13.00
TYP
TYP
o
55
0.40
50.0
40.0
1.7
2.0
15.0
DC Drain
Current
MAX
MAX
10:1
1
5
2.0
8.0
WATTS OUTPUT )
SILICON GATE ENHANCEMENT MODE
A
UNITS TEST CONDITIONS
Relative
UNITS TEST CONDITIONS
Ohm
Mho
RF POWER
Amp
mA
dB
pF
pF
uA
pF
%
V
V
HIGH EFFICIENCY, LINEAR
25 C )
HIGH GAIN, LOW NOISE
Drain to
o
Voltage
Idq =
Idq =
Idq = 0.20
36
Gate
15.0
Ids =
ROHS COMPLIANT
V
Package Style
Ids =
Vds =
Vgs = 20V, Ids =
Vds =
Vds =
Vds =
Vds = 10V, Vgs = 5V
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
0.20
0.20
0.20
REVISION 10/01/2007
Watts
12.5
LDMOS
12.5
12.5
12.5
0.20
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Voltage
Source
36
Single Ended
V
8.00
12.5
12.5
12.5
TRANSISTOR
S02
A
V, F =
V, F =
V, F =
L2721
Voltage
Gate to
Source
500
500
500
20
V
MHz
MHz
MHz
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l2721 Summary of contents
Page 1
... Mho Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = Amp Vgs = 20V, Vds = 10V 12.5 Vgs = 0V MHz pF Vds = 12.5 Vgs = 0V MHz Vds = pF 12.5 Vgs = 0V MHz Vds = pF REVISION 10/01/2007 L2721 TRANSISTOR S02 Gate to Source Voltage 12.5 500 MHz 12.5 500 MHz 12 ...
Page 2
... POUT VS PIN GRAPH L2721 POUT VS PIN Freq=500MHz, VDS=12.5V, Idq=. Efficiency @15 watts = 47 0.5 1 1.5 Pin in Watts IV CURVE L1C 1 DIE VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com L2721 15 ...