op215ajmda Analog Devices, Inc., op215ajmda Datasheet - Page 2
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op215ajmda
Manufacturer Part Number
op215ajmda
Description
Dual Precision Jfet-input Operational Amplifier
Manufacturer
Analog Devices, Inc.
Datasheet
1.OP215AJMDA.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
OP215AJMDA
Manufacturer:
ADI/亚德诺
Quantity:
20 000
OP215–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
NOTES
1
2
3
Specifications are subject to change without notice.
Input bias current is specified for two different conditions. The T
with the device operating in a warmed up condition at 25∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves
of I
JFET input op amps. I
Setting time is defined here for a unity gain inverter connection using 2 kW resistors. It is the time required for the error voltage (the voltage at the inverting input pin
on the amplifier) to settle to within a specified percent of its final value from the time a 10 V step input is applied to the inverter. See setting time test circuit.
Sample tested.
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large-Signal Voltage
Gain
Output Voltage Swing
Supply Current
Slew Rate
Gain Bandwidth
Product
Closed-Loop Bandwidth CLBW
Setting Time
Input Voltage Range
Common-Mode
Rejection Ratio
Power Supply Rejection
Ratio
Input Noise Voltage
Density
Input Noise Current
Density
Input Capacitance
S
versus T
3
j
and I
S
versus T
S
and I
1
1
OS
A
. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard
are measured at V
Symbol
V
I
I
R
A
V
I
SR
GBW
t
IVR
CMRR
PSRR
I
C
S
OS
B
SY
n
n
OS
IN
VO
O
IN
CM
R
‘G’ Grade
T
Device Operating
T
Device Operating
R
V
R
R
‘G’ Grade
A
A
To 0.01%
To 0.05%
To 0.10%
V
E, G Grades
V
V
f
f
f
f
Conditions
O
O
O
O
S
L
O
L
L
VCL
VCL
CM
S
S
j
j
= 0.
= 100 Hz
= 1,000 Hz
= 100 Hz
= 1,000 Hz
= 25∞C
= 25∞C
= 50 W
= ± 10 V to ± 16 V
= ± 10 V to ± 15 V
= 10 kW
= 2 kW
= ± 10 V
= ± IVR
= 1
= 1
2 kW,
(at V
2
j
= 25∞C specification is with the junction at ambient temperature; the device operating specification is
S
= ±15 V, T
A
–2–
= 25 C, unless otherwise noted.)
Min
150
± 12
± 11
10
3.5
10.2
–10.2
82
OP215E
Type
0.2
3
5
± 15
± 18
10
500
± 13
± 12.7
6.0
18
5.7
13
2.3
1.1
0.9
14.8
–11.5
100
10
20
15
0.01
0.01
3
1,2
Max
1.0
50
100
± 100
± 300
8.5
51
Min
50
± 12
± 11
5
3.0
10.1
–10.1
80
OP215G
Type
2.0
2.5
3
5
± 15
± 18
10
200
± 13
± 12.7
7.0
7.0
15
5.4
12
2.4
1.2
1.0
14.8
–11.5
96
16
20
15
0.01
0.01
3
1,2
Max
4.0
6.0
100
200
± 300
± 600
10.0
12.0
100
mV
mV
pA
pA
W
V/mV
V
V
mA
mA
V/ s
MHz
V
V
dB
pA/÷Hz
pA/÷Hz
pF
Unit
pA
pA
MHz
nV/÷Hz
nV/÷Hz
REV. A
s
s
s
V/V
V/V