km416c1200c Samsung Semiconductor, Inc., km416c1200c Datasheet - Page 4

• Manufacturer Part Number: km416c1200c
• Description: 1m X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C1000C, KM416C1200C
KM416V1000C, KM416V1200C
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
Symbol
* : Operating Current (RAS and UCAS, LCAS cycling @t
* : RAS-only Refresh Current (UCAS=LCAS=V
* : Fast Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @t
: Standby Current (RAS=UCAS=LCAS=W=V
: Standby Current (RAS=UCAS=LCAS=W=V
: Battery back-up current, Average power supply current, Battery back-up mode
: Self Refresh Current
I
I
I
I
I
I
I
I
Input high voltage(V
DQ=Don t care, T
T
RAS=UCAS=LCAS=V
DQ0 ~ DQ15=V
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
RAS
I
I
address can be changed maximum once within one fast page mode cycle time, t
CC1
CC
=T
is specified as an average current. In I
, I
RAS
CC3
min~300ns
, I
Don t care
Don t care
Don t care
Don t care
CC4
Normal
Normal
Power
CC
L
L
L
L
RC
and I
-0.2V, 0.2V or Open
IH
=31.25us(4K/L-ver), 125us(1K/L-ver),
)=V
IL
CC6
, W=OE=A0 ~ A11=V
CC
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
-0.2V, Input low voltage(V
Don t care
Don t care
Don t care
Don t care
Speed
-5
-6
-5
-6
-5
-6
-5
-6
IL
, UCAS or LCAS, Address cycling @t
KM416V1000C
IH
CC
IH
CC1
CC
)
, RAS cycling @t
-0.2V)
-0.2V or 0.2V,
, I
200
300
150
0.5
CC3
90
80
90
80
90
80
90
80
1
1
IL
and I
RC
(Continued)
)=0.2V, UCAS, LCAS=0.2V,
=min.)
CC6,
KM416V1200C
RC
address can be changed maximum once while RAS=V
=min.)
140
130
140
130
200
140
130
200
150
RC
0.5
90
80
1
1
=min.)
PC
=min.)
Max
KM416C1000C
PC
.
200
350
200
90
80
90
80
90
80
90
80
2
1
1
KM416C1200C
CMOS DRAM
140
130
140
130
200
140
130
250
200
90
80
2
1
1
IL
. In I
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
CC4
,