km416v4100c Samsung Semiconductor, Inc., km416v4100c Datasheet
km416v4100c
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km416v4100c Summary of contents
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... Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM416V4000C/C-L(3.3V, 8K Ref.) - KM416V4100C/C-L(3.3V, 4K Ref.) • Active Power Dissipation Speed 8K -45 ...
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... KM416V4000C, KM416V4100C PIN CONFIGURATION (Top Views) •KM416V40(1)00CS DQ0 DQ15 3 48 DQ1 DQ14 4 47 DQ2 DQ13 5 46 DQ3 DQ12 DQ4 DQ11 8 43 DQ5 DQ10 9 42 DQ6 DQ9 10 41 DQ7 DQ8 11 40 N.C N LCAS ...
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... KM416V4000C, KM416V4100C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... KM416V4000C, KM416V4100C DC AND OPERATING CHARACTERISTICS Symbol Power Speed -45 I Don t care CC1 Normal I Don t care CC2 L -45 I Don t care CC3 -45 I Don t care CC4 Normal I Don t care CC5 L -45 I Don t care CC6 I L Don t care CC7 I L Don t care CCS Operating Current (RAS and UCAS, LCAS, Address cycling @ ...
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... KM416V4000C, KM416V4100C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
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... KM416V4000C, KM416V4100C AC CHARACTERISTICS (Continued) Parameter Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS set-up time (CAS -before-RAS refresh) CAS hold time (CAS -before-RAS refresh) ...
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... KM416V4000C, KM416V4100C TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
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... KM416V4000C, KM416V4100C NOTES 1. § Á An initial pause of 200 is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is achieved (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 5ns for all inputs ...
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... KM416V4000C, KM416V4100C are referenced to the earlier CAS falling edge. 13. ASC CAH t 14. is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle referenced to the later CAS falling edge at word read-modify-write cycle. ...