km41c4000d ETC-unknow, km41c4000d Datasheet - Page 4

• Manufacturer Part Number: km41c4000d
• Description: 4m X 1bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: ETC-unknow

KM41C4000D, KM41V4000D
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
* : Operating Current (RAS and CAS cycling @
* : RAS-only Refresh Current (CAS=V
* : Fast Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
: Standby Current (RAS=CAS=W=V
: Standby Current (RAS=CAS=W=V
: Battery back-up current, Average power supply current, Battery back-up mode
Symbol
: Self refresh current
RAS=CAS=V
Input high voltage(V
DQ=Don t Care, T
I
I
I
I
I
I
I
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
I
I
I
CC1
CC
CC4
is specified as an average current. In I
, I
, address can be changed maximum once within one fast page mode cycle time,
CC3
, I
IL
CC4
, W=OE =A0 ~ A10=D=V
and I
Don t Care
Don t Care
Don t Care
Don t Care
Don t Care
RC
IH
Normal
Power
=125us(L-ver.), T
)=V
CC6
L
L
L
CC
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
-0.2V, Input low voltage(V
IL
IH
CC
IH
, CAS, Address cycling @
)
, RAS, Address cycling @
-0.2V)
RAS
CC-
Don t Care
Don t Care
Don t Care
Don t Care
=T
Speed
0.2V or 0.2V
t
-5
-6
-7
-5
-6
-7
-5
-6
-7
-5
-6
-7
CC1
RAS
RC
=min.)
min~300ns
, I
CC3
IL
(Recommend operating conditions unless otherwise noted.)
I
)=0.2V, CAS=0.2V,
CC6
and I
t
RC
t
PC
t
KM41V4000D
RC
=min)
CC7,
=min.)
=min.)
address can be changed maximum once while RAS=V
100
200
150
0.5
60
55
60
55
45
40
60
55
1
-
-
-
-
Max
t
PC
.
KM41C4000D
200
300
85
75
65
85
75
65
65
55
45
85
75
65
2
1
-
CMOS DRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
IL
. In