km41c4000d ETC-unknow, km41c4000d Datasheet - Page 5

• Manufacturer Part Number: km41c4000d
• Description: 4m X 1bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: ETC-unknow

KM41C4000D, KM41V4000D
CAPACITANCE
AC CHARACTERISTICS
Test condition (5V device) : V
Test condition (3.3V device) : V
Note) *1 : 5V only
Input capacitance [D]
Input capacitance [A0 ~ A10]
Input capacitance [RAS, CAS, W]
Output capacitance [Q]
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Parameter
(T
Parameter
A
=25 C, V
CC
CC
=5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
=3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
(0 C T
CC
=5V or 3.3V, f=1MHz)
A
70 C, See note 1,2)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RWC
RAC
CAC
AA
CLZ
OFF
T
RP
RAS
RSH
CSH
CAS
RCD
RAD
CRP
ASR
RAH
ASC
CAH
RAL
RCS
RCH
RRH
WCH
WP
RWL
CWL
Symbol
Symbol
C
C
C
C
OUT
Min
110
IN1
IN2
IN3
90
30
50
15
50
15
20
15
10
10
25
10
10
15
13
0
0
3
5
0
0
0
0
0
-5
*1
Max
10K
10K
50
15
25
12
50
35
25
Min
110
130
40
60
15
60
15
20
15
10
10
30
10
10
15
15
0
0
3
5
0
0
0
0
0
Min
-
-
-
-
-6
Max
10K
10K
60
15
30
12
50
45
30
Min
130
150
50
70
20
70
20
20
15
10
15
35
15
15
15
15
0
0
3
5
0
0
0
0
0
7
Max
5
5
7
7
Max
10K
10K
70
20
35
17
50
50
35
CMOS DRAM
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
pF
pF
pF
pF
Notes
3,4,10
3,4,5
3,10
10
3
6
2
4
8
8