bcx52-10 NXP Semiconductors, bcx52-10 Datasheet - Page 9

• Manufacturer Part Number: bcx52-10
• Description: Bc638; Bcp52; Bcx52 60 V, 1 A Pnp Medium Power Transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BC638_BCP52_BCX52_7
Product data sheet
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, mounting pad for collector 6 cm
typical values
5
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
4
Table 8.
T
[1]
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25 C unless otherwise specified.
10
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
3
h
h
p
FE
FE
selection -10
selection -16
300 s; = 0.02.
2
10
2
Rev. 07 — 26 June 2007
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
j
CB
CB
EB
CE
CE
CE
CB
CE
1
I
I
I
I
I
= 150 C
= 500 mA;
= 50 mA
C
C
C
C
C
= 5 V; I
= 30 V; I
= 30 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BC638; BCP52; BCX52
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
60 V, 1 A PNP medium power transistors
= i
= 0 A;
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2007. All rights reserved.
t
p
006aaa818
(s)
Max
-
250
-
160
250
-
-
100
10
100
0.5
1
10
3
Unit
nA
nA
V
V
pF
MHz
A
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