2sa1006a Inchange Semiconductor Company, 2sa1006a Datasheet
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2sa1006a
Manufacturer Part Number
2sa1006a
Description
Isc Silicon Pnp Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SA1006A.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Good Linearity of h
·High Collector-Emitter Breakdown Voltage-
·Wide Area of Safe Operation
·Complement to Type 2SC2336A
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
isc Website:www.iscsemi.cn
SYMBOL
: V
V
V
V
T
I
P
T
CBO
CEO
EBO
I
CM
stg
C
C
J
(BR)CEO
Silicon PNP Power Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation@ T
Total Power Dissipation@ T
Junction Temperature
Storage Temperature Range
= -200V(Min)
FE
PARAMETER
C
=25℃
a
=25℃
℃)
-55~150
VALUE
-200
-200
-5.0
-1.5
-3.0
150
1.5
25
UNIT
W
℃
℃
V
V
V
A
A
isc
Product Specification
2SA1006A
Related parts for 2sa1006a
2sa1006a Summary of contents
Page 1
... Collector Current-Continuous C I Collector Current-Peak CM Collector Power Dissipation Total Power Dissipation Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn ℃) VALUE UNIT -200 V -200 V -5.0 V -1.5 A -3.0 A =25℃ 1 =25℃ ℃ 150 ℃ -55~150 isc Product Specification 2SA1006A ...
Page 2
... CONDITIONS I = -500mA -50mA -500mA -50mA -150V -3.0V -5mA ; -150mA ; -100mA ; V = -10V -10V;f= 1.0MHz Product Specification 2SA1006A MIN TYP. MAX UNIT -1.0 V -1.5 V μA -1.0 μA -1 320 80 MHz 45 pF ...