2sa1952 ROHM Co. Ltd., 2sa1952 Datasheet

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2sa1952

Manufacturer Part Number
2sa1952
Description
High-speed Switching Transistor -60v, -5a
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
High-speed Switching Transistor (−60V, −5A)
2SA1952
1) High speed switching. (tf : Typ. 0.15 µs at I
2) Low V
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Basic ordering unit (pieces)
Features
Absolute maximum ratings (Ta = 25°C)
Packaging specifications and h
Electrical characteristics (Ta = 25°C)
Package
Parameter
CE(sat)
Code
Type
Parameter
h
FE
. (Typ. −0.2V at I
Symbol
2SA1952
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
CPT3
2500
C
Symbol
C
V
V
BV
BV
BV
TL
Q
h
h
Cob
I
I
CE(sat)
tstg
BE(sat)
ton
CBO
EBO
FE
FE
f
C
tf
CBO
CEO
EBO
T
/I
1
2
B
= −3/−0.15A)
−55~+150
FE
Limits
−100
−100
−60
−60
−10
150
Min.
120
−5
−5
−5
10
40
1
Typ.
130
80
C
W(Tc=25°C)
= −3A)
A(Pulse)
Unit
W
°C
°C
Max.
−0.3
−0.5
−1.2
−1.5
−10
−10
270
V
V
V
A
0.3
1.5
0.3
MHz
Unit
µA
µA
pF
µs
µs
µs
V
V
V
V
V
V
V
I
I
I
V
V
I
I
I
I
V
V
V
V
I
I
V
C
C
E
C
C
C
C
C
B1
CB
EB
CE
CE
CE
CB
CC
= −50µA
/I
/I
/I
/I
= −50µA
= −1mA
= −3A , R
= −I
B
B
B
B
= −5V
= −3A/ −0.15A
= −4A/ −0.2A
= −3A/ −0.15A
= −4A /−0.2A
= −100V
= −2V , I
= −2V , I
= −10V , I
= −10V , I
External dimensions (Unit : mm)
−30V
B2
ROHM : CPT3
EIAJ : SC-63
2SA1952
= −0.15A
L
C
C
= 10Ω
E
E
= −1A
= −3A
= 0.5A , f = 30MHz
= 0A , f = 1MHz
Conditions
0.8Min.
2.5
1.5
0.9
9.5
5.5
1.5
Rev.A
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SA1952
1/2

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2sa1952 Summary of contents

Page 1

... CE C − − = −10V , 30MHz 80 MHz − − = −10V , 1MHz 130 − − µs = − 10Ω 0 − − µs = −I = −0.15A 1 − − µs −30V 0 2SA1952 5.5 1.5 0.9 C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) Rev.A 1/2 ...

Page 2

... V 500 CE 200 100 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 (A) EMITTER CURRENT : I E Fig.5 Resistance ratio vs. emitter current −50 2SA1952 1000 500 200 100 50 Ta=100°C 25°C 20 −25° −1.8 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 (V) COLLECTOR CURRENT : I Fig ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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