2sa1532g Panasonic Corporation of North America, 2sa1532g Datasheet
2sa1532g
Manufacturer Part Number
2sa1532g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1532G.pdf
(4 pages)
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Transistors
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2007
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter saturation voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common-emitter reverse transfer capacitance
automatic insertion through the tape packing and the magazine
packing
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
70 to 140
*
T
B
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
CEO
EBO
a
110 to 220
I
I
I
stg
V
C
CE(sat)
C
h
NF
CBO
Z
C
j
CEO
EBO
f
= 25°C
FE
BE
T
rb
re
C
−55 to +150
Rating
V
V
V
V
V
I
V
V
V
V
C
−30
−20
−30
150
150
CE
CB
CE
EB
CE
CB
CB
CB
CB
−5
= −10 mA, I
SJC00346BED
= −10 µA, I
= −20 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
C
mA
°C
°C
V
V
V
B
B
C
E
E
E
E
E
= 0
C
= −1 mA
= 0
= 0
= 1 mA
= 1 mA, f = 200 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 2 MHz
= 1 mA, f = 10.7 MHz
= −1 mA
■ Package
• Code
• Marking Symbol: E
• Pin Name
SMini3-F2
1. Base
2. Emitter
3. Collector
Min
150
70
− 0.7
− 0.1
Typ
300
1.2
2.8
22
− 0.1
−100
Max
−10
220
4.0
2.0
60
MHz
Unit
µA
µA
µA
dB
pF
V
V
Ω
1
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2sa1532g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G ■ Features • High transition frequency f T • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1532G 200 180 160 140 120 100 100 120 140 160 ( °C ) Ambient temperature T a 120 = − 100 = 75° 25°C − ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...