2sa1533 Panasonic Corporation of North America, 2sa1533 Datasheet
2sa1533
Manufacturer Part Number
2sa1533
Description
Silicon Pnp Epitaxial Planer Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1533.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2sa1533-R
Manufacturer:
PANASONIC
Quantity:
20 000
Company:
Part Number:
2sa1533-R
Manufacturer:
PANASONIC
Quantity:
20 000
Transistors
2SA1533
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC3939
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: Nobember 2002
• Low collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
W output amplifier.
2. * : Rank classification
Rank
Parameter
h
Parameter
FE1
90 to 155
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
CBO
I
T
V
V
V
h
CEO
EBO
a
CP
130 to 220
I
stg
h
C
CE(sat)
BE(sat)
C
C
FE1
CBO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
*
R
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
− 0.5
C
C
E
C
C
−80
−80
150
CB
CE
CE
CB
CB
−5
−1
= −10 µA, I
= −100 µA, I
= −10 µA, I
= −300 mA, I
= −300 mA, I
1
SJC00022BED
= −10 V, I
= −5 V, I
= −10 V, I
= −20 V, I
= −10 V, I
Conditions
Unit
C
°C
°C
E
C
W
E
V
V
V
A
A
C
E
E
B
= −500 mA
= 0
= 0
B
B
= 50 mA, f = 200 MHz
= 0
= 0, f = 1 MHz
= −150 mA
= 0
= −30 mA
= −30 mA
0.7
(1.27)
±0.1
0.45
Min
−80
−80
−5
5.0
90
50
1
+0.2
–0.1
±0.2
2
3
(1.27)
2.54
− 0.85
− 0.2
Typ
100
120
±0.15
11
0.45
TO-92NL-A1 Package
+0.15
–0.1
− 0.1
− 0.4
Max
−1.2
220
4.0
20
±0.2
1 : Emitter
2 : Collector
3 : Base
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
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2sa1533 Summary of contents
Page 1
... Transistors 2SA1533 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC3939 ■ Features • Low collector-emitter voltage (Base open) V • Optimum for the driver stage of a low-frequency and output amplifier. ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... 1.2 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a CE(sat) C − −1 = 75° 25°C − 0.1 −25°C − 0.01 − 0.001 −1 −10 −100 −1 000 ( mA ) Collector current I C ...
Page 3
... 100 120 140 ( °C ) Ambient temperature T a Safe operation area −10 Single pulse = 25° − − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 ( V ) Collector-emitter voltage V CE SJC00022BED 2SA1533 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...