2sa1512 Panasonic Corporation of North America, 2sa1512 Datasheet
2sa1512
Manufacturer Part Number
2sa1512
Description
Silicon Pnp Epitaxial Planer Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1512.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1512
Manufacturer:
NEC/PANASONIC
Quantity:
3 000
Transistors
2SA1512
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• Low collector-emitter saturation voltage V
• Optimum for low-voltage operation and for converters
• Allowing supply with the radial taping
• Optimum for high-density mounting
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
h
FE1
90 to 155
* 1
Q
* 1
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
h
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
I
h
C
stg
FE1
CE(sat)
BE(sat)
C
C
130 to 220
CBO
CEO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
* 2
CE(sat)
R
−55 to +150
Rating
I
I
I
V
V
V
V
I
I
V
V
C
C
E
C
C
− 0.5
−25
−20
300
150
CB
CE
CE
CE
CB
CB
−7
−1
= −10 µA, I
= −10 µA, I
= −1 mA, I
= −500 mA, I
= −500 mA, I
SJC00019BED
= −20 V, I
= −2 V, I
= −2 V, I
= −25 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
B
C
C
°C
°C
C
E
V
V
V
A
A
B
E
E
E
= 0
= − 0.5 A
= −1 A
= 0
= 0
B
B
= 0
= 0
= 50 mA, f = 200 MHz
= 0, f = 1 MHz
= −50 mA
= −50 mA
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
Min
−25
−20
4.0
−7
90
25
2
±0.2
3
Typ
150
15
2.0
±0.2
−100
− 0.4
Max
−1.2
220
−1
25
NS-B1 Package
0.7
0.45
1: Emitter
2: Collector
3: Base
±0.1
Unit: mm
+0.20
–0.10
MHz
Unit
nA
µA
pF
V
V
V
V
V
1
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2sa1512 Summary of contents
Page 1
... Transistors 2SA1512 Silicon PNP epitaxial planar type For low-frequency amplification ■ Features • Low collector-emitter saturation voltage V • Optimum for low-voltage operation and for converters • Allowing supply with the radial taping • Optimum for high-density mounting ■ Absolute Maximum Ratings T ...
Page 2
... 500 400 300 200 100 100 120 140 160 ( °C ) Ambient temperature T a BE(sat) C −100 = −10 = −25° −1 25°C 75°C − 0.1 − 0.01 − 0.01 − 0.1 −1 − Collector current I C ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...