2sa1889 HITACHI, 2sa1889 Datasheet - Page 2

• Manufacturer Part Number: 2sa1889
• Description: Silicon Pnp Epitaxial
• Manufacturer: HITACHI

2SA1889
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current
transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
See characteristic curves of 2SA1810.
2
1. Value at T
2SA1889B
2SA1889C
C
= 25°C.
Symbol
V
V
V
I
h
h
V
V
f
Cob
CBO
T
FE
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
Min
–200
–200
–4
—
60
100
—
—
200
—
Symbol
V
V
V
I
I
P
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
300
5.0
C
C(peak)
CBO
CEO
EBO
C
C
*
1
Max
—
—
—
–10
120
200
–1.0
–1.0
—
—
Unit
V
V
V
µA
V
V
MHz
pF
Ratings
–200
–200
–4
–0.2
–0.5
1.4
8
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
CE
CE
CE
CB
= –10 µA, I
= –10 µA, I
= –1 mA, R
= –30 mA, I
= –160 V, I
= –5 V, I
= –5 V, I
= –20 V, I
= –30 V, I
Unit
V
V
V
A
A
W
W
°C
°C
C
C
C
E
C
E
BE
= –10 mA
= –30 mA
B
= 0
= 0
E
= 0, f = 1 MHz
= –30 mA
= –3 mA
=
= 0