2sa1495 Panasonic Corporation of North America, 2sa1495 Datasheet
2sa1495
Manufacturer Part Number
2sa1495
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1495.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2sa1495-O
Manufacturer:
PANASONIC
Quantity:
60
Power Transistors
2SA1495
Silicon PNP epitaxial planar type
For high-speed switching
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE1
Features
High foward current transfer ratio h
High-speed switching
High collector to base voltage V
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE1
Rank classification
Parameter
Parameter
30 to 60
T
Ta=25 C
C
Q
=25 C
50 to 100
Symbol
V
V
V
I
I
P
T
T
CP
C
P
C
j
stg
CBO
CEO
EBO
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CBO
EBO
T
FE1
FE2
(T
Symbol
CBO
CEO
CE(sat)
BE(sat)
C
*
(T
FE
=25˚C)
80 to 160
–55 to +150
C
=25˚C)
Ratings
O
–400
–400
– 0.6
–1.2
150
1.3
–7
15
V
V
I
V
V
I
I
V
I
I
V
C
C
C
C
B1
CE
CB
EB
CE
CE
CC
= –10mA, I
= –300mA, I
= –300mA, I
= –300mA,
= –60mA, I
= –10V, I
= –7V, I
= –5V, I
= –5V, I
= –400V, I
= –100V
Unit
Conditions
C
C
C
˚C
˚C
W
V
V
V
A
A
C
B
= 0
= –100mA
= –300mA
= –100mA, f = 1MHz
B2
E
B
B
= 0
= 0
= –60mA
= –60mA
= 60mA,
1.1 0.1
–400
min
1
30
10
1
7.0 0.3
3.0 0.2
4.6 0.4
7.0 0.3
4.6 0.4
2
2
3
3
2.3 0.2
2.3 0.2
0.75 0.1
0.75 0.1
2.0 0.2
3.0 0.2
1.1 0.1
typ
15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
2.5
0.5 max.
3.5 0.2
–100
–100
max
–1.0
–1.5
160
1.0
3.5
1.0
3.5 0.2
1:Base
2:Collector
3:Emitter
I Type Package
0.4 0.1
0.85 0.1
0.9 0.1
Unit: mm
Unit: mm
0 to 0.15
0 to 0.15
MHz
Unit
V
V
V
A
A
s
s
s
1
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2sa1495 Summary of contents
Page 1
... Power Transistors 2SA1495 Silicon PNP epitaxial planar type For high-speed switching Features High foward current transfer ratio h High-speed switching High collector to base voltage V I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. Absolute Maximum Ratings ...
Page 2
... I C – 0.3 10ms 300ms – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage 2SA1495 V — I CE(sat) C –100 –30 –10 –3 T =100˚C C –1 25˚C – 0.3 –25˚C – 0.1 – ...
Page 3
... Power Transistors –1 10 –4 –3 –2 – Time — t th(t) (1) Without heat sink (2) With 2mm Al heat sink (1) ( 2SA1495 4 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...